Trapping activity on multicrystalline Si wafers studied by combining fast PL imaging and high resolved electrical techniques
Multi-crystalline Si is the preferred material in the photovoltaic world market due to the good balance between production costs and efficiency. However, it has a large number of defects acting as recombination centers for the photogenerated carriers. In this work, we use both the fast inspection pr...
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| creator | Martinez, O. Moralejo, B. Hortelano, V. Tejero, A. Gonzalez, M. A. Jimenez, J. Mass, J. Parra, V. |
| description | Multi-crystalline Si is the preferred material in the photovoltaic world market due to the good balance between production costs and efficiency. However, it has a large number of defects acting as recombination centers for the photogenerated carriers. In this work, we use both the fast inspection provided by the photoluminescence imaging technique with the very high spatial resolution of the light beam induced current and electron beam induced current techniques, for obtaining a comprehensive understanding of the electrical activity and distribution of defects in this material. |
| doi_str_mv | 10.1109/CDE.2013.6481417 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>proquest_6IE</sourceid><recordid>TN_cdi_proquest_miscellaneous_1816034821</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>6481417</ieee_id><sourcerecordid>1816034821</sourcerecordid><originalsourceid>FETCH-LOGICAL-i208t-cef1f1cea56b4d682069062e03cd5dea08eef5d1e8638c8090701ad9090addf93</originalsourceid><addsrcrecordid>eNo1kEtPwzAQhM1LopTekbj4yCVlN04d54hKeUiVQKKcK9fetEZuUmKnqBI_npTCaUeab2c1y9gVwhARitvx_WSYAoqhzBRmmB-xC8xkLjIplThmvVRmIkEBcMIGRa7-PTk67TyUIsmKHM_ZIIQPAEgBEHPZY9-zRm82rlpybaLburjjdcXXrY_ONLsQtfeuIv7m-JcuqQk8xNY6snyx46ZeL1y13y11iPx1yt1aL3-zKstXbrniDYXabzucPJnYOKM9j2RWlftsKVyys1L7QIO_2WfvD5PZ-CmZvjw-j--miUtBxcRQiSUa0iO5yKxUKcgCZEogjB1Z0qCIypFFUlIoo6CAHFDbohPa2rIQfXZzyN009f5unK9dMOS9rqhuwxwVShCZSrFDrw-oI6L5pukaNbv538_FD6yrcuw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype><pqid>1816034821</pqid></control><display><type>conference_proceeding</type><title>Trapping activity on multicrystalline Si wafers studied by combining fast PL imaging and high resolved electrical techniques</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Martinez, O. ; Moralejo, B. ; Hortelano, V. ; Tejero, A. ; Gonzalez, M. A. ; Jimenez, J. ; Mass, J. ; Parra, V.</creator><creatorcontrib>Martinez, O. ; Moralejo, B. ; Hortelano, V. ; Tejero, A. ; Gonzalez, M. A. ; Jimenez, J. ; Mass, J. ; Parra, V.</creatorcontrib><description>Multi-crystalline Si is the preferred material in the photovoltaic world market due to the good balance between production costs and efficiency. However, it has a large number of defects acting as recombination centers for the photogenerated carriers. In this work, we use both the fast inspection provided by the photoluminescence imaging technique with the very high spatial resolution of the light beam induced current and electron beam induced current techniques, for obtaining a comprehensive understanding of the electrical activity and distribution of defects in this material.</description><identifier>ISSN: 2163-4971</identifier><identifier>ISBN: 9781467346665</identifier><identifier>ISBN: 1467346667</identifier><identifier>EISSN: 2643-1300</identifier><identifier>EISBN: 1467346683</identifier><identifier>EISBN: 1467346675</identifier><identifier>EISBN: 9781467346672</identifier><identifier>EISBN: 9781467346689</identifier><identifier>DOI: 10.1109/CDE.2013.6481417</identifier><language>eng</language><publisher>IEEE</publisher><subject>Charge carrier processes ; Defects ; Devices ; EBIC ; Imaging ; LBIC ; Light beams ; Manufacturing engineering ; Markets ; mc-Si ; Optical reflection ; Photovoltaic cells ; PL-imaging ; Silicon ; Spatial resolution ; Trapping ; trapping activity</subject><ispartof>2013 Spanish Conference on Electron Devices, 2013, p.361-364</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6481417$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,314,776,780,785,786,2052,27901,27902,54895</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6481417$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Martinez, O.</creatorcontrib><creatorcontrib>Moralejo, B.</creatorcontrib><creatorcontrib>Hortelano, V.</creatorcontrib><creatorcontrib>Tejero, A.</creatorcontrib><creatorcontrib>Gonzalez, M. A.</creatorcontrib><creatorcontrib>Jimenez, J.</creatorcontrib><creatorcontrib>Mass, J.</creatorcontrib><creatorcontrib>Parra, V.</creatorcontrib><title>Trapping activity on multicrystalline Si wafers studied by combining fast PL imaging and high resolved electrical techniques</title><title>2013 Spanish Conference on Electron Devices</title><addtitle>CDE</addtitle><description>Multi-crystalline Si is the preferred material in the photovoltaic world market due to the good balance between production costs and efficiency. However, it has a large number of defects acting as recombination centers for the photogenerated carriers. In this work, we use both the fast inspection provided by the photoluminescence imaging technique with the very high spatial resolution of the light beam induced current and electron beam induced current techniques, for obtaining a comprehensive understanding of the electrical activity and distribution of defects in this material.</description><subject>Charge carrier processes</subject><subject>Defects</subject><subject>Devices</subject><subject>EBIC</subject><subject>Imaging</subject><subject>LBIC</subject><subject>Light beams</subject><subject>Manufacturing engineering</subject><subject>Markets</subject><subject>mc-Si</subject><subject>Optical reflection</subject><subject>Photovoltaic cells</subject><subject>PL-imaging</subject><subject>Silicon</subject><subject>Spatial resolution</subject><subject>Trapping</subject><subject>trapping activity</subject><issn>2163-4971</issn><issn>2643-1300</issn><isbn>9781467346665</isbn><isbn>1467346667</isbn><isbn>1467346683</isbn><isbn>1467346675</isbn><isbn>9781467346672</isbn><isbn>9781467346689</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2013</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNo1kEtPwzAQhM1LopTekbj4yCVlN04d54hKeUiVQKKcK9fetEZuUmKnqBI_npTCaUeab2c1y9gVwhARitvx_WSYAoqhzBRmmB-xC8xkLjIplThmvVRmIkEBcMIGRa7-PTk67TyUIsmKHM_ZIIQPAEgBEHPZY9-zRm82rlpybaLburjjdcXXrY_ONLsQtfeuIv7m-JcuqQk8xNY6snyx46ZeL1y13y11iPx1yt1aL3-zKstXbrniDYXabzucPJnYOKM9j2RWlftsKVyys1L7QIO_2WfvD5PZ-CmZvjw-j--miUtBxcRQiSUa0iO5yKxUKcgCZEogjB1Z0qCIypFFUlIoo6CAHFDbohPa2rIQfXZzyN009f5unK9dMOS9rqhuwxwVShCZSrFDrw-oI6L5pukaNbv538_FD6yrcuw</recordid><startdate>20130201</startdate><enddate>20130201</enddate><creator>Martinez, O.</creator><creator>Moralejo, B.</creator><creator>Hortelano, V.</creator><creator>Tejero, A.</creator><creator>Gonzalez, M. A.</creator><creator>Jimenez, J.</creator><creator>Mass, J.</creator><creator>Parra, V.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20130201</creationdate><title>Trapping activity on multicrystalline Si wafers studied by combining fast PL imaging and high resolved electrical techniques</title><author>Martinez, O. ; Moralejo, B. ; Hortelano, V. ; Tejero, A. ; Gonzalez, M. A. ; Jimenez, J. ; Mass, J. ; Parra, V.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i208t-cef1f1cea56b4d682069062e03cd5dea08eef5d1e8638c8090701ad9090addf93</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Charge carrier processes</topic><topic>Defects</topic><topic>Devices</topic><topic>EBIC</topic><topic>Imaging</topic><topic>LBIC</topic><topic>Light beams</topic><topic>Manufacturing engineering</topic><topic>Markets</topic><topic>mc-Si</topic><topic>Optical reflection</topic><topic>Photovoltaic cells</topic><topic>PL-imaging</topic><topic>Silicon</topic><topic>Spatial resolution</topic><topic>Trapping</topic><topic>trapping activity</topic><toplevel>online_resources</toplevel><creatorcontrib>Martinez, O.</creatorcontrib><creatorcontrib>Moralejo, B.</creatorcontrib><creatorcontrib>Hortelano, V.</creatorcontrib><creatorcontrib>Tejero, A.</creatorcontrib><creatorcontrib>Gonzalez, M. A.</creatorcontrib><creatorcontrib>Jimenez, J.</creatorcontrib><creatorcontrib>Mass, J.</creatorcontrib><creatorcontrib>Parra, V.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Martinez, O.</au><au>Moralejo, B.</au><au>Hortelano, V.</au><au>Tejero, A.</au><au>Gonzalez, M. A.</au><au>Jimenez, J.</au><au>Mass, J.</au><au>Parra, V.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Trapping activity on multicrystalline Si wafers studied by combining fast PL imaging and high resolved electrical techniques</atitle><btitle>2013 Spanish Conference on Electron Devices</btitle><stitle>CDE</stitle><date>2013-02-01</date><risdate>2013</risdate><spage>361</spage><epage>364</epage><pages>361-364</pages><issn>2163-4971</issn><eissn>2643-1300</eissn><isbn>9781467346665</isbn><isbn>1467346667</isbn><eisbn>1467346683</eisbn><eisbn>1467346675</eisbn><eisbn>9781467346672</eisbn><eisbn>9781467346689</eisbn><abstract>Multi-crystalline Si is the preferred material in the photovoltaic world market due to the good balance between production costs and efficiency. However, it has a large number of defects acting as recombination centers for the photogenerated carriers. In this work, we use both the fast inspection provided by the photoluminescence imaging technique with the very high spatial resolution of the light beam induced current and electron beam induced current techniques, for obtaining a comprehensive understanding of the electrical activity and distribution of defects in this material.</abstract><pub>IEEE</pub><doi>10.1109/CDE.2013.6481417</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 2163-4971 |
| ispartof | 2013 Spanish Conference on Electron Devices, 2013, p.361-364 |
| issn | 2163-4971 2643-1300 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_1816034821 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Charge carrier processes Defects Devices EBIC Imaging LBIC Light beams Manufacturing engineering Markets mc-Si Optical reflection Photovoltaic cells PL-imaging Silicon Spatial resolution Trapping trapping activity |
| title | Trapping activity on multicrystalline Si wafers studied by combining fast PL imaging and high resolved electrical techniques |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-10T04%3A07%3A47IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Trapping%20activity%20on%20multicrystalline%20Si%20wafers%20studied%20by%20combining%20fast%20PL%20imaging%20and%20high%20resolved%20electrical%20techniques&rft.btitle=2013%20Spanish%20Conference%20on%20Electron%20Devices&rft.au=Martinez,%20O.&rft.date=2013-02-01&rft.spage=361&rft.epage=364&rft.pages=361-364&rft.issn=2163-4971&rft.eissn=2643-1300&rft.isbn=9781467346665&rft.isbn_list=1467346667&rft_id=info:doi/10.1109/CDE.2013.6481417&rft_dat=%3Cproquest_6IE%3E1816034821%3C/proquest_6IE%3E%3Curl%3E%3C/url%3E&rft.eisbn=1467346683&rft.eisbn_list=1467346675&rft.eisbn_list=9781467346672&rft.eisbn_list=9781467346689&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1816034821&rft_id=info:pmid/&rft_ieee_id=6481417&rfr_iscdi=true |