IVT measurements of GaN power Schottky diodes with drift layers grown by HVPE on HVPE GaN substrates

To date, a majority of epitaxial layers for vertical gallium nitride (GaN) power Schottky diodes have been grown by metalorganic chemical vapor deposition. In this work, we investigate the electrical properties of vertical GaN Schottky diodes with drift layers grown by hydride vapor phase epitaxy (H...

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Veröffentlicht in:	Journal of materials science. Materials in electronics 2016-06, Vol.27 (6), p.6108-6114
Hauptverfasser:	Tompkins, R. P., Khan, M. R., Green, R., Jones, K. A., Leach, J. H.
Format:	Artikel
Sprache:	eng
Schlagworte:	Characterization and Evaluation of Materials Chemistry and Materials Science Devices Diodes Drift Electric potential Electric power generation Gallium nitrides Materials Science Optical and Electronic Materials Schottky diodes Voltage
Online-Zugang:	Volltext
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