Small signal model parameters analysis of GaN and GaAs based HEMTs over temperature for microwave applications

•Thermal and small signal model parameters for two different technologies: gallium nitride (GaN) and gallium arsenide (GaAs) are investigated.•Temperature coefficients of the small signal model parameters are extracted.•The trend of intrinsic capacitances with temperature for the GaN and GaAs device...

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Veröffentlicht in:	Solid-state electronics 2016-05, Vol.119, p.11-18
Hauptverfasser:	Alim, Mohammad A., Rezazadeh, Ali A., Gaquiere, Christophe
Format:	Artikel
Sprache:	eng
Schlagworte:	Devices Equivalent circuit parameters GaAs HEMT Gallium arsenide Gallium nitrides GaN/SiC HEMT High electron mobility transistors Mathematical models On-wafer measurements Semiconductor devices Silicon carbide Substrates Temperature coefficients Thermal characterizations
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