Poly(3-hexylthiophene): TIPS-pentacene blends aiming transistor applications

Poly(3-hexylthiophene):6,13-bis(triisopropylsilylethynyl)-pentacene (P3HT:TP) blends with a ratio of 1:1 (wt/wt) were deposited via spin coating on anodized oxide (Al2O3). A phase separation of the compounds was observed, resulting in the formation of crystalline aggregates of TP molecules that segr...

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Veröffentlicht in:	Thin solid films 2016-06, Vol.608, p.97-101
Hauptverfasser:	da Silva Ozório, Maiza, Nogueira, Gabriel Leonardo, Morais, Rogério Miranda, da Silva Martin, Cibely, Constantino, Carlos José Leopoldo, Alves, Neri
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum oxide Anodizing Blends Devices Field effect transistors Mobility OFET Oxides P3HT Segregations Semiconductor blends Semiconductor devices Surface treatment TIPS-pentacene Vertical segregation
Online-Zugang:	Volltext
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