A phenomenological model for selective growth of semiconducting single-walled carbon nanotubes based on catalyst deactivation

A method for the selective semiconducting single-walled carbon nanotube (SWCNT) growth over a continuous range from 67% to 98%, within the diameter range of 0.8-1.2 nm, by the use of a "catalyst conditioning process" prior to growth is reported. Continuous control revealed an inverse relat...

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Veröffentlicht in:	Nanoscale 2016-01, Vol.8 (2), p.115-123
Hauptverfasser:	Sakurai, Shunsuke, Yamada, Maho, Sakurai, Hiroko, Sekiguchi, Atsuko, Futaba, Don N, Hata, Kenji
Format:	Artikel
Sprache:	eng
Schlagworte:	Borders Catalysts Constraining Deactivation Inverse Nanostructure Selectivity Single wall carbon nanotubes
Online-Zugang:	Volltext
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