Bismuth Interfacial Doping of Organic Small Molecules for High Performance n-type Thermoelectric Materials

Development of chemically doped high performance n‐type organic thermoelectric (TE) materials is of vital importance for flexible power generating applications. For the first time, bismuth (Bi) n‐type chemical doping of organic semiconductors is described, enabling high performance TE materials. The...

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Veröffentlicht in:	Angewandte Chemie International Edition 2016-08, Vol.55 (36), p.10672-10675
Hauptverfasser:	Huang, Dazhen, Wang, Chao, Zou, Ye, Shen, Xingxing, Zang, Yaping, Shen, Hongguang, Gao, Xike, Yi, Yuanping, Xu, Wei, Di, Chong-an, Zhu, Daoben
Format:	Artikel
Sprache:	eng
Schlagworte:	Bismuth chemical doping Coefficients Conductivity Doping Electrical conductivity Electrical resistivity Electronics industry interfacial doping Maximum power Metals n-type materials Organic semiconductors Power factor Semiconductors Thermoelectric materials thermoelectrics Tuning
Online-Zugang:	Volltext
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