Wide Band-Gap Bismuth-based p-Dopants for Opto-Electronic Applications
Ten new efficient p‐dopants for conductivity doping of organic semiconductors for OLEDs are identified. The key advantage of the electrophilic tris(carboxylato) bismuth(III) compounds is the unique low absorption of the resulting doped layers which promotes the efficiency of OLED devices. The combin...
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| Veröffentlicht in: | Angewandte Chemie International Edition 2016-08, Vol.55 (35), p.10493-10497 |
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| container_issue | 35 |
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| container_title | Angewandte Chemie International Edition |
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| creator | Pecqueur, Sébastien Maltenberger, Anna Petrukhina, Marina A. Halik, Marcus Jaeger, Arndt Pentlehner, Dominik Schmid, Günter |
| description | Ten new efficient p‐dopants for conductivity doping of organic semiconductors for OLEDs are identified. The key advantage of the electrophilic tris(carboxylato) bismuth(III) compounds is the unique low absorption of the resulting doped layers which promotes the efficiency of OLED devices. The combination of these features with their low fabrication cost, volatility, and stability, make these materials very attractive as dopants in organic electronics.
Bi doping: Ten new efficient p‐dopants for conductivity doping of organic semiconductors for OLEDs are identified. The key advantage of the electrophilic tris(carboxylato)bismuth(III) compounds is the unique low absorption of the resulting doped layers. The combination of this feature with their low fabrication cost, volatility, and stability, make these materials very attractive as dopants in organic electronics. |
| doi_str_mv | 10.1002/anie.201601926 |
| format | Article |
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Bi doping: Ten new efficient p‐dopants for conductivity doping of organic semiconductors for OLEDs are identified. The key advantage of the electrophilic tris(carboxylato)bismuth(III) compounds is the unique low absorption of the resulting doped layers. 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| subjects | Bismuth Bismuth compounds Diodes donor-acceptor systems Dopants doping Electronics industry Fabrication OLEDs Optoelectronics organic electronics Organic light emitting diodes Organic semiconductors Volatility |
| title | Wide Band-Gap Bismuth-based p-Dopants for Opto-Electronic Applications |
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