GaN films and GaN/AlGaN quantum wells grown by plasma assisted molecular beam epitaxy using a high density radical source

The behavior of a high density radical source for the plasma assisted molecular beam epitaxy of GaN and AlGaN compounds is studied and compared with the one of a conventional plasma source. Plasma light emission correlates with the GaN growth rate. Both attest to the better efficiency of the new sou...

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Veröffentlicht in:	Journal of crystal growth 2016-01, Vol.433, p.165-171
Hauptverfasser:	Cordier, Yvon, Damilano, Benjamin, Aing, Phannara, Chaix, Catherine, Linez, Florence, Tuomisto, Filip, Vennéguès, Philippe, Frayssinet, Eric, Lefebvre, Denis, Portail, Marc, Nemoz, Maud
Format:	Artikel
Sprache:	eng
Schlagworte:	A1. Crystal morphology A1. Impurities A1. Point defects A3. Molecular beam epitaxy A3. Quantum wells Aluminum gallium nitrides B1. Nitrides Crystal growth Equivalence Gallium nitrides High density Light emission Molecular beam epitaxy Radicals
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