GaN films and GaN/AlGaN quantum wells grown by plasma assisted molecular beam epitaxy using a high density radical source

The behavior of a high density radical source for the plasma assisted molecular beam epitaxy of GaN and AlGaN compounds is studied and compared with the one of a conventional plasma source. Plasma light emission correlates with the GaN growth rate. Both attest to the better efficiency of the new source for producing active nitrogen species with resulting growth rates well beyond 1µm/h. The present study shows that GaN films with equivalent structural and optical quality can be grown even with a growth rate enhancement by a factor of 5. The purity of the grown films is investigated as well as point defects. Positron annihilation shows that plasma conditions can be tuned in order to limit the increase of the gallium-vacancy related complexes density by about 2x1016cm−3 while reaching growth rates as high as 2.1µm/h. •GaN films were grown by Plasma Assisted MBE with growth rates up to 2.1µm/h.•Growth rates well correlate with the optical signal emitted by the nitrogen plasma.•Optical and structural properties of GaN films are not sensitive with growth rate.•Impurity and point defects concentrations have been studied.•GaN/AlGaN QWs on GaN grown at low and high rates exhibit similar optical properties.