Domains of molecular beam epitaxial growth of Ga(In)AsBi on GaAs and InP substrates

We investigate the molecular beam epitaxial growth of GaAsBi and GaInAsBi layers on GaAs and InP-substrates as the materials are intended to serve as an active region in optoelectronic devices. The layers were grown at substrate temperatures between 250–400°C and for all layers the growth rate was k...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Journal of crystal growth 2016-02, Vol.436, p.56-61
Hauptverfasser:	Bennarndt, Wolfgang, Boehm, Gerhard, Amann, Markus-Christian
Format:	Artikel
Sprache:	eng
Schlagworte:	A3. Molecular beam epitaxy Arsenic B1. Alloys B1. Bismuth compounds B2. Semiconducting III–V materials Bismuth Crystal growth Flux Gallium arsenide Molecular beam epitaxy Overpressure Substrates
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!