Electron-Ion Mixed Conduction of BaCe sub( 0.90)Y sub( 0.10)O sub( 3- delta d) Thin Film Generated by Ru Substitution
The structural and electrical properties of a c-axis-oriented BaCe...Ru...Y...O... (BCRY) thin film on an Al...O... (0001) substrate depending on film thickness have been studied. The lattice constant of the c-axis decreases with increasing film thickness. The electrical conductivity is higher in th...
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Veröffentlicht in: | Journal of the Physical Society of Japan 2016-03, Vol.85 (3), p.1-1 |
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container_title | Journal of the Physical Society of Japan |
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creator | Ochi, Masanori Tsuchiya, Takashi Yamaguchi, Shohei Suetsugu, Takaaki Suzuki, Naoya Kobayashi, Masaki Minohara, Makoto Horiba, Koji Kumigashira, Hiroshi Higuchi, Tohru |
description | The structural and electrical properties of a c-axis-oriented BaCe...Ru...Y...O... (BCRY) thin film on an Al...O... (0001) substrate depending on film thickness have been studied. The lattice constant of the c-axis decreases with increasing film thickness. The electrical conductivity is higher in the thin film with a small lattice constant. The activation energy (E...) of the dry BCRY thin film with a high conductivity is 0.26 eV, which corresponds to half of that of the bulk ceramic. The BCRY thin film exhibits electron-ion mixed conduction with a small E... of 0.18 eV below 400 ...C in H...O atmosphere. The Ce... state created by oxygen vacancies, which locates at the top of the valence band, plays an important role in the electron-ion mixed conduction or proton conduction of the BCRY thin film. (ProQuest: ... denotes formulae/symbols omitted.) |
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(BCRY) thin film on an Al...O... (0001) substrate depending on film thickness have been studied. The lattice constant of the c-axis decreases with increasing film thickness. The electrical conductivity is higher in the thin film with a small lattice constant. The activation energy (E...) of the dry BCRY thin film with a high conductivity is 0.26 eV, which corresponds to half of that of the bulk ceramic. The BCRY thin film exhibits electron-ion mixed conduction with a small E... of 0.18 eV below 400 ...C in H...O atmosphere. The Ce... state created by oxygen vacancies, which locates at the top of the valence band, plays an important role in the electron-ion mixed conduction or proton conduction of the BCRY thin film. 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(BCRY) thin film on an Al...O... (0001) substrate depending on film thickness have been studied. The lattice constant of the c-axis decreases with increasing film thickness. The electrical conductivity is higher in the thin film with a small lattice constant. The activation energy (E...) of the dry BCRY thin film with a high conductivity is 0.26 eV, which corresponds to half of that of the bulk ceramic. The BCRY thin film exhibits electron-ion mixed conduction with a small E... of 0.18 eV below 400 ...C in H...O atmosphere. The Ce... state created by oxygen vacancies, which locates at the top of the valence band, plays an important role in the electron-ion mixed conduction or proton conduction of the BCRY thin film. 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(BCRY) thin film on an Al...O... (0001) substrate depending on film thickness have been studied. The lattice constant of the c-axis decreases with increasing film thickness. The electrical conductivity is higher in the thin film with a small lattice constant. The activation energy (E...) of the dry BCRY thin film with a high conductivity is 0.26 eV, which corresponds to half of that of the bulk ceramic. The BCRY thin film exhibits electron-ion mixed conduction with a small E... of 0.18 eV below 400 ...C in H...O atmosphere. The Ce... state created by oxygen vacancies, which locates at the top of the valence band, plays an important role in the electron-ion mixed conduction or proton conduction of the BCRY thin film. (ProQuest: ... denotes formulae/symbols omitted.)</abstract></addata></record> |
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subjects | Drying Electrical resistivity Film thickness Lattice parameters Proton conduction Resistivity Symbols Thin films |
title | Electron-Ion Mixed Conduction of BaCe sub( 0.90)Y sub( 0.10)O sub( 3- delta d) Thin Film Generated by Ru Substitution |
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