Large-area photodetector with high-sensitivity and broadband spectral response based on composition-graded CdSSe nanowire-chip

The nanowire-chip based large-area and broad-band-response photodetector was realized by integrating the ternary bandgap-graded CdS1−xSex nanowire-chip on proper substrate and optimizing electrode pattern. The actual light-to-dark current ratio (Ilight/Idark) is subject to the substrate type and the...

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Veröffentlicht in:	Journal of alloys and compounds 2015-11, Vol.649, p.793-800
Hauptverfasser:	Guo, Shuai, Li, Zhishuang, Song, Guangli, Zou, Bingsuo, Wang, Xiaoxu, Liu, Ruibin
Format:	Artikel
Sprache:	eng
Schlagworte:	Broad-band spectrum response Carriers CdS1−xSex nanowire-chip Detectors Electrodes Interdigital electrode Nanostructure Nanowires Photoconductivity Photodetectors Substrates Thickness
Online-Zugang:	Volltext
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