A Vertically Integrated Junctionless Nanowire Transistor

A vertically integrated junctionless field-effect transistor (VJ-FET), which is composed of vertically stacked multiple silicon nanowires (SiNWs) with a gate-all-around (GAA) structure, is demonstrated on a bulk silicon wafer for the first time. The proposed VJ-FET mitigates the issues of variabilit...

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Veröffentlicht in:	Nano letters 2016-03, Vol.16 (3), p.1840-1847
Hauptverfasser:	Lee, Byung-Hyun, Hur, Jae, Kang, Min-Ho, Bang, Tewook, Ahn, Dae-Chul, Lee, Dongil, Kim, Kwang-Hee, Choi, Yang-Kyu
Format:	Artikel
Sprache:	eng
Schlagworte:	Complexity Field effect transistors Inversions Nanowires Semiconductor devices Silicon Three dimensional Transistors
Online-Zugang:	Volltext
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