Evaluation of residual stress in sputtered tantalum thin-film

[Display omitted] •Tantalum thin-films have been deposited by DC magnetron sputtering system.•Thin-film stress is observed to be strongly influenced by sputtering pressure.•Transition towards the compressive stress is ascribed to the annealing at 300°C.•Expose thin-film to air ambient or ion bombard...

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Veröffentlicht in:	Applied surface science 2016-05, Vol.371, p.571-575
Hauptverfasser:	Al-masha’al, Asa’ad, Bunting, Andrew, Cheung, Rebecca
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Compressive properties Ion bombardment Mathematical analysis Residual stress Sputtering Stresses Tantalum Thin films
Online-Zugang:	Volltext
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