Role of oxygen contaminant on the physical properties of sputtered AlN thin films

The paper deals with the role of the oxygen contamination, coming from residual gas atmosphere in the deposition chamber, on the physical properties of AlN thin films, sputtered in Ar + N2 working gas, at different values of nitrogen flux percentages, and without substrate heating. Contaminant conce...

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Veröffentlicht in:	Journal of alloys and compounds 2015-11, Vol.649, p.1267-1272
Hauptverfasser:	Signore, M.A., Taurino, A., Valerini, D., Rizzo, A., Farella, I., Catalano, M., Quaranta, F., Siciliano, P.
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum nitride Contaminants Contamination Crystal structure Nitride materials Oxygen Partial pressure Physical properties Scanning electron microscopy Thin films Tuning Vapour deposition
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