Homoepitaxial growth of a-plane GaN layers by reaction between Ga sub(2) O vapor and NH sub(3) gas

Growth of high-quality a-plane GaN layers was performed by reaction between Ga sub(2) O vapor and NH3 gas at a high temperature. Smooth a-plane GaN epitaxial layers were obtained on a-plane GaN seed substrates sliced from thick c-plane GaN crystals. Growth rate increased with increasing Ga sub(2) O...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2015-06, Vol.54 (6)
Hauptverfasser:	Sumi, Tomoaki, Taniyama, Yuuki, Takatsu, Hiroaki, Juta, Masami, Kitamoto, Akira, Imade, Mamoru, Yoshimura, Masashi, Isemura, Masashi, Mori, Yusuke
Format:	Artikel
Sprache:	eng
Schlagworte:	Crystals Epitaxial layers Gallium nitrides Oxygen Partial pressure Secondary ion mass spectrometry Seeds X-rays
Online-Zugang:	Volltext
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