Effects of gas flow rate on deposition rate and number of Si clusters incorporated into a-Si:H films

The suppression of cluster incorporation into a-Si:H films is the key to better film stability, because incorporated clusters contribute to the formation of SiH2 bonds and hence lead to light-induced degradation of the films. To deposit stable a-Si:H solar cells at a high deposition rate (DR), we st...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2016-01, Vol.55 (1S), p.1
Hauptverfasser:	Toko, Susumu, Torigoe, Yoshihiro, Keya, Kimitaka, Seo, Hyunwoong, Itagaki, Naho, Koga, Kazunori, Shiratani, Masaharu
Format:	Artikel
Sprache:	eng
Schlagworte:	Clusters Deposition Direct reduction Discharge Gas flow Radicals Silicon Solar power generation
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