Diffraction of γ-rays with energies of 1.17 and 1.33 MeV by a flat Si crystal
Diffraction of γ-rays by a flat Si crystal has been demonstrated using a high flux 60Co source with an intensity of 2.3 TBq. The diffraction intensities of the γ-rays with energies of 1.17 and 1.33 MeV have been measured as a function of the rotation angle of the crystal. Three peaks corresponding t...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 2015-05, Vol.54 (5), p.52203 |
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| container_issue | 5 |
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| container_title | Japanese Journal of Applied Physics |
| container_volume | 54 |
| creator | Matsuba, Shunya Hayakawa, Takehito Shizuma, Toshiyuki Nishimori, Nobuyuki Nagai, Ryoji Sawamura, Masaru Angell, Christopher T. Fujiwara, Mamoru Hajima, Ryoichi |
| description | Diffraction of γ-rays by a flat Si crystal has been demonstrated using a high flux 60Co source with an intensity of 2.3 TBq. The diffraction intensities of the γ-rays with energies of 1.17 and 1.33 MeV have been measured as a function of the rotation angle of the crystal. Three peaks corresponding to the Si(440) and Si(220) diffractions for 1.17 MeV and the Si(440) diffraction for 1.33 MeV have been measured. The heights and shapes of these three peaks are well reproduced by taking into account Bragg s law and the experimental geometry. |
| doi_str_mv | 10.7567/JJAP.54.052203 |
| format | Article |
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The diffraction intensities of the γ-rays with energies of 1.17 and 1.33 MeV have been measured as a function of the rotation angle of the crystal. Three peaks corresponding to the Si(440) and Si(220) diffractions for 1.17 MeV and the Si(440) diffraction for 1.33 MeV have been measured. The heights and shapes of these three peaks are well reproduced by taking into account Bragg s law and the experimental geometry.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.7567/JJAP.54.052203</identifier><identifier>CODEN: JJAPB6</identifier><language>eng</language><publisher>The Japan Society of Applied Physics</publisher><subject>Angles (geometry) ; Crystals ; Diffraction ; Energy measurement ; Flats ; Flux ; Silicon</subject><ispartof>Japanese Journal of Applied Physics, 2015-05, Vol.54 (5), p.52203</ispartof><rights>2015 The Japan Society of Applied Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c1857-d53189b2b71931d3c8d4f634fdb5adb2c3289a443e377ab17670db9a06e15c8b3</citedby><cites>FETCH-LOGICAL-c1857-d53189b2b71931d3c8d4f634fdb5adb2c3289a443e377ab17670db9a06e15c8b3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.7567/JJAP.54.052203/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,776,780,27901,27902,53821,53868</link.rule.ids></links><search><creatorcontrib>Matsuba, Shunya</creatorcontrib><creatorcontrib>Hayakawa, Takehito</creatorcontrib><creatorcontrib>Shizuma, Toshiyuki</creatorcontrib><creatorcontrib>Nishimori, Nobuyuki</creatorcontrib><creatorcontrib>Nagai, Ryoji</creatorcontrib><creatorcontrib>Sawamura, Masaru</creatorcontrib><creatorcontrib>Angell, Christopher T.</creatorcontrib><creatorcontrib>Fujiwara, Mamoru</creatorcontrib><creatorcontrib>Hajima, Ryoichi</creatorcontrib><title>Diffraction of γ-rays with energies of 1.17 and 1.33 MeV by a flat Si crystal</title><title>Japanese Journal of Applied Physics</title><addtitle>Jpn. J. Appl. Phys</addtitle><description>Diffraction of γ-rays by a flat Si crystal has been demonstrated using a high flux 60Co source with an intensity of 2.3 TBq. The diffraction intensities of the γ-rays with energies of 1.17 and 1.33 MeV have been measured as a function of the rotation angle of the crystal. Three peaks corresponding to the Si(440) and Si(220) diffractions for 1.17 MeV and the Si(440) diffraction for 1.33 MeV have been measured. The heights and shapes of these three peaks are well reproduced by taking into account Bragg s law and the experimental geometry.</description><subject>Angles (geometry)</subject><subject>Crystals</subject><subject>Diffraction</subject><subject>Energy measurement</subject><subject>Flats</subject><subject>Flux</subject><subject>Silicon</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNp1kMtKxDAUhoMoOI5uXWcpQmuuTbscvA_jBbxsQ5ImmqHT1qSD9Ll8D5_Jlhlwo6tzDv_HD-cD4BijVPBMnM3ns8eUsxRxQhDdARNMmUgYyvgumCBEcMIKQvbBQYzL4cw4wxNwf-GdC8p0vqlh4-D3VxJUH-Gn796hrW148zaOAU6xgKouh4VSeGdfoe6hgq5SHXzy0IQ-dqo6BHtOVdEebecUvFxdPp_fJIuH69vz2SIxOOciKTnFeaGJFriguKQmL5nLKHOl5qrUxFCSF4oxaqkQSmORCVTqQqHMYm5yTafgZNPbhuZjbWMnVz4aW1Wqts06SpyjHBWUMTGg6QY1oYkxWCfb4Fcq9BIjOYqTozjJmdyI--32TSuXzTrUwydyuVTtCPEtJtvSDejpH-g_vT9ASHh9</recordid><startdate>20150501</startdate><enddate>20150501</enddate><creator>Matsuba, Shunya</creator><creator>Hayakawa, Takehito</creator><creator>Shizuma, Toshiyuki</creator><creator>Nishimori, Nobuyuki</creator><creator>Nagai, Ryoji</creator><creator>Sawamura, Masaru</creator><creator>Angell, Christopher T.</creator><creator>Fujiwara, Mamoru</creator><creator>Hajima, Ryoichi</creator><general>The Japan Society of Applied Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20150501</creationdate><title>Diffraction of γ-rays with energies of 1.17 and 1.33 MeV by a flat Si crystal</title><author>Matsuba, Shunya ; Hayakawa, Takehito ; Shizuma, Toshiyuki ; Nishimori, Nobuyuki ; Nagai, Ryoji ; Sawamura, Masaru ; Angell, Christopher T. ; Fujiwara, Mamoru ; Hajima, Ryoichi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c1857-d53189b2b71931d3c8d4f634fdb5adb2c3289a443e377ab17670db9a06e15c8b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Angles (geometry)</topic><topic>Crystals</topic><topic>Diffraction</topic><topic>Energy measurement</topic><topic>Flats</topic><topic>Flux</topic><topic>Silicon</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Matsuba, Shunya</creatorcontrib><creatorcontrib>Hayakawa, Takehito</creatorcontrib><creatorcontrib>Shizuma, Toshiyuki</creatorcontrib><creatorcontrib>Nishimori, Nobuyuki</creatorcontrib><creatorcontrib>Nagai, Ryoji</creatorcontrib><creatorcontrib>Sawamura, Masaru</creatorcontrib><creatorcontrib>Angell, Christopher T.</creatorcontrib><creatorcontrib>Fujiwara, Mamoru</creatorcontrib><creatorcontrib>Hajima, Ryoichi</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Matsuba, Shunya</au><au>Hayakawa, Takehito</au><au>Shizuma, Toshiyuki</au><au>Nishimori, Nobuyuki</au><au>Nagai, Ryoji</au><au>Sawamura, Masaru</au><au>Angell, Christopher T.</au><au>Fujiwara, Mamoru</au><au>Hajima, Ryoichi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Diffraction of γ-rays with energies of 1.17 and 1.33 MeV by a flat Si crystal</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><addtitle>Jpn. J. Appl. Phys</addtitle><date>2015-05-01</date><risdate>2015</risdate><volume>54</volume><issue>5</issue><spage>52203</spage><pages>52203-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPB6</coden><abstract>Diffraction of γ-rays by a flat Si crystal has been demonstrated using a high flux 60Co source with an intensity of 2.3 TBq. The diffraction intensities of the γ-rays with energies of 1.17 and 1.33 MeV have been measured as a function of the rotation angle of the crystal. Three peaks corresponding to the Si(440) and Si(220) diffractions for 1.17 MeV and the Si(440) diffraction for 1.33 MeV have been measured. The heights and shapes of these three peaks are well reproduced by taking into account Bragg s law and the experimental geometry.</abstract><pub>The Japan Society of Applied Physics</pub><doi>10.7567/JJAP.54.052203</doi><tpages>5</tpages></addata></record> |
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| ispartof | Japanese Journal of Applied Physics, 2015-05, Vol.54 (5), p.52203 |
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| language | eng |
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| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | Angles (geometry) Crystals Diffraction Energy measurement Flats Flux Silicon |
| title | Diffraction of γ-rays with energies of 1.17 and 1.33 MeV by a flat Si crystal |
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