$The geometry of catastrophic fracture during high temperature processing of silicon$

The geometry of catastrophic fracture during high temperature processing of silicon

The geometry of fracture associated with the propagation of cracks originating at the edges of (001) oriented, 200 mm diameter silicon wafers has been investigated under two regimes of high temperature processing. Under spike annealing, fracture did not occur on low index planes and all except one w...

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Veröffentlicht in:	International journal of fracture 2015-09, Vol.195 (1-2), p.79-85
Hauptverfasser:	Tanner, B. K., Garagorri, J., Gorostegui-Colinas, E., Elizalde, M. R., Bytheway, R., McNally, P. J., Danilewsky, A. N.
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Automotive Engineering Characterization and Evaluation of Materials Chemistry and Materials Science Civil Engineering Classical Mechanics Compressive properties Computer simulation Crack propagation Deformation mechanisms Dwell time Finite element method Fracture mechanics Geometry High temperature Materials Science Mechanical Engineering Original Paper Plastic deformation Silicon Silicon wafers Stress concentration Stress distribution Stress relaxation Temperature dependence Thermal stress Wafers X ray imagery
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