The geometry of catastrophic fracture during high temperature processing of silicon
The geometry of fracture associated with the propagation of cracks originating at the edges of (001) oriented, 200 mm diameter silicon wafers has been investigated under two regimes of high temperature processing. Under spike annealing, fracture did not occur on low index planes and all except one w...
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| Veröffentlicht in: | International journal of fracture 2015-09, Vol.195 (1-2), p.79-85 |
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| container_title | International journal of fracture |
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| creator | Tanner, B. K. Garagorri, J. Gorostegui-Colinas, E. Elizalde, M. R. Bytheway, R. McNally, P. J. Danilewsky, A. N. |
| description | The geometry of fracture associated with the propagation of cracks originating at the edges of (001) oriented, 200 mm diameter silicon wafers has been investigated under two regimes of high temperature processing. Under spike annealing, fracture did not occur on low index planes and all except one wafer exhibited crack patterns that started initially to run radially, but after a distance of typically 20–30 mm, turned and ran almost tangentially. Wafers subjected to plateau annealing, with a 60 s dwell time at high temperature, predominantly fractured through radial cracks running along
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110
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directions. X-ray diffraction imaging reveals substantial slip in all wafers subjected to plateau annealing. We demonstrate using finite element (FE) modelling that the change in fracture geometry is associated with this plastic deformation, which changes the stress distribution during the cooling phase of the rapid thermal annealing cycle. FE simulations without plastic relaxation show that the radial component of the thermal stress distribution is compressive in the centre of the wafer, causing the crack to run tangentially. Simulations incorporating temperature dependent plasticity showed that the equivalent stress becomes tensile when the plateau anneal allows time for significant plastic relaxation, permitting the crack to continue propagating linearly. |
| doi_str_mv | 10.1007/s10704-015-0050-1 |
| format | Article |
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⟨
110
⟩
directions. X-ray diffraction imaging reveals substantial slip in all wafers subjected to plateau annealing. We demonstrate using finite element (FE) modelling that the change in fracture geometry is associated with this plastic deformation, which changes the stress distribution during the cooling phase of the rapid thermal annealing cycle. FE simulations without plastic relaxation show that the radial component of the thermal stress distribution is compressive in the centre of the wafer, causing the crack to run tangentially. Simulations incorporating temperature dependent plasticity showed that the equivalent stress becomes tensile when the plateau anneal allows time for significant plastic relaxation, permitting the crack to continue propagating linearly.</description><identifier>ISSN: 0376-9429</identifier><identifier>EISSN: 1573-2673</identifier><identifier>DOI: 10.1007/s10704-015-0050-1</identifier><language>eng</language><publisher>Dordrecht: Springer Netherlands</publisher><subject>Annealing ; Automotive Engineering ; Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Civil Engineering ; Classical Mechanics ; Compressive properties ; Computer simulation ; Crack propagation ; Deformation mechanisms ; Dwell time ; Finite element method ; Fracture mechanics ; Geometry ; High temperature ; Materials Science ; Mechanical Engineering ; Original Paper ; Plastic deformation ; Silicon ; Silicon wafers ; Stress concentration ; Stress distribution ; Stress relaxation ; Temperature dependence ; Thermal stress ; Wafers ; X ray imagery</subject><ispartof>International journal of fracture, 2015-09, Vol.195 (1-2), p.79-85</ispartof><rights>The Author(s) 2015</rights><rights>International Journal of Fracture is a copyright of Springer, (2015). All Rights Reserved. © 2015. This work is published under http://creativecommons.org/licenses/by/4.0 (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c462t-bccddd83084ecfa747c43631b936de84dc67ed756b99333a585ca49724524013</citedby><cites>FETCH-LOGICAL-c462t-bccddd83084ecfa747c43631b936de84dc67ed756b99333a585ca49724524013</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s10704-015-0050-1$$EPDF$$P50$$Gspringer$$Hfree_for_read</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s10704-015-0050-1$$EHTML$$P50$$Gspringer$$Hfree_for_read</linktohtml><link.rule.ids>314,776,780,27901,27902,41464,42533,51294</link.rule.ids></links><search><creatorcontrib>Tanner, B. K.</creatorcontrib><creatorcontrib>Garagorri, J.</creatorcontrib><creatorcontrib>Gorostegui-Colinas, E.</creatorcontrib><creatorcontrib>Elizalde, M. R.</creatorcontrib><creatorcontrib>Bytheway, R.</creatorcontrib><creatorcontrib>McNally, P. J.</creatorcontrib><creatorcontrib>Danilewsky, A. N.</creatorcontrib><title>The geometry of catastrophic fracture during high temperature processing of silicon</title><title>International journal of fracture</title><addtitle>Int J Fract</addtitle><description>The geometry of fracture associated with the propagation of cracks originating at the edges of (001) oriented, 200 mm diameter silicon wafers has been investigated under two regimes of high temperature processing. Under spike annealing, fracture did not occur on low index planes and all except one wafer exhibited crack patterns that started initially to run radially, but after a distance of typically 20–30 mm, turned and ran almost tangentially. Wafers subjected to plateau annealing, with a 60 s dwell time at high temperature, predominantly fractured through radial cracks running along
⟨
110
⟩
directions. X-ray diffraction imaging reveals substantial slip in all wafers subjected to plateau annealing. We demonstrate using finite element (FE) modelling that the change in fracture geometry is associated with this plastic deformation, which changes the stress distribution during the cooling phase of the rapid thermal annealing cycle. FE simulations without plastic relaxation show that the radial component of the thermal stress distribution is compressive in the centre of the wafer, causing the crack to run tangentially. Simulations incorporating temperature dependent plasticity showed that the equivalent stress becomes tensile when the plateau anneal allows time for significant plastic relaxation, permitting the crack to continue propagating linearly.</description><subject>Annealing</subject><subject>Automotive Engineering</subject><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Civil Engineering</subject><subject>Classical Mechanics</subject><subject>Compressive properties</subject><subject>Computer simulation</subject><subject>Crack propagation</subject><subject>Deformation mechanisms</subject><subject>Dwell time</subject><subject>Finite element method</subject><subject>Fracture mechanics</subject><subject>Geometry</subject><subject>High temperature</subject><subject>Materials Science</subject><subject>Mechanical Engineering</subject><subject>Original Paper</subject><subject>Plastic deformation</subject><subject>Silicon</subject><subject>Silicon wafers</subject><subject>Stress concentration</subject><subject>Stress distribution</subject><subject>Stress relaxation</subject><subject>Temperature dependence</subject><subject>Thermal stress</subject><subject>Wafers</subject><subject>X ray imagery</subject><issn>0376-9429</issn><issn>1573-2673</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><sourceid>C6C</sourceid><sourceid>BENPR</sourceid><recordid>eNp1kMtKxDAUhoMoOF4ewF3BjZvoyT1ZyuANBlw4-5BJ02mH3kzaxby9rRUEwdWBc77_5_AhdEPgngCoh0RAAcdABAYQgMkJWhGhGKZSsVO0AqYkNpyac3SR0gEAjNJ8hT62Zcj2oWvCEI9ZV2TeDS4NsevLymdFdH4YY8jyMVbtPiurfZkNoelDdN_7PnY-pDTfpmyq6sp37RU6K1ydwvXPvETb56ft-hVv3l_e1o8b7LmkA955n-e5ZqB58IVTXHnOJCM7w2QeNM-9VCFXQu6MYYw5oYV33CjKBeVA2CW6W2qnJz7HkAbbVMmHunZt6MZkiQYNBiSd0ds_6KEbYzs9ZykVRjPOGEwUWSgfu5RiKGwfq8bFoyVgZ8t2sWwny3a2bOdmumRSPxsK8bf5_9AXnRB_Pg</recordid><startdate>20150901</startdate><enddate>20150901</enddate><creator>Tanner, B. 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K.</au><au>Garagorri, J.</au><au>Gorostegui-Colinas, E.</au><au>Elizalde, M. R.</au><au>Bytheway, R.</au><au>McNally, P. J.</au><au>Danilewsky, A. N.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The geometry of catastrophic fracture during high temperature processing of silicon</atitle><jtitle>International journal of fracture</jtitle><stitle>Int J Fract</stitle><date>2015-09-01</date><risdate>2015</risdate><volume>195</volume><issue>1-2</issue><spage>79</spage><epage>85</epage><pages>79-85</pages><issn>0376-9429</issn><eissn>1573-2673</eissn><abstract>The geometry of fracture associated with the propagation of cracks originating at the edges of (001) oriented, 200 mm diameter silicon wafers has been investigated under two regimes of high temperature processing. Under spike annealing, fracture did not occur on low index planes and all except one wafer exhibited crack patterns that started initially to run radially, but after a distance of typically 20–30 mm, turned and ran almost tangentially. Wafers subjected to plateau annealing, with a 60 s dwell time at high temperature, predominantly fractured through radial cracks running along
⟨
110
⟩
directions. X-ray diffraction imaging reveals substantial slip in all wafers subjected to plateau annealing. We demonstrate using finite element (FE) modelling that the change in fracture geometry is associated with this plastic deformation, which changes the stress distribution during the cooling phase of the rapid thermal annealing cycle. FE simulations without plastic relaxation show that the radial component of the thermal stress distribution is compressive in the centre of the wafer, causing the crack to run tangentially. Simulations incorporating temperature dependent plasticity showed that the equivalent stress becomes tensile when the plateau anneal allows time for significant plastic relaxation, permitting the crack to continue propagating linearly.</abstract><cop>Dordrecht</cop><pub>Springer Netherlands</pub><doi>10.1007/s10704-015-0050-1</doi><tpages>7</tpages><oa>free_for_read</oa></addata></record> |
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| subjects | Annealing Automotive Engineering Characterization and Evaluation of Materials Chemistry and Materials Science Civil Engineering Classical Mechanics Compressive properties Computer simulation Crack propagation Deformation mechanisms Dwell time Finite element method Fracture mechanics Geometry High temperature Materials Science Mechanical Engineering Original Paper Plastic deformation Silicon Silicon wafers Stress concentration Stress distribution Stress relaxation Temperature dependence Thermal stress Wafers X ray imagery |
| title | The geometry of catastrophic fracture during high temperature processing of silicon |
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