Design and measurement of class EF2 power oscillator

A class EF2 power oscillator designed in standard 130 nm CMOS at 2.5 GHz frequency is presented. The oscillator relies on a direct path based on a power amplifier and a feedback path based on passive elements and an MOS varactor. Class EF2 is used to reduce voltage stress across the switch, enabling...

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Veröffentlicht in:	Electronics letters 2015-05, Vol.51 (10), p.744-745
Hauptverfasser:	Madureira, H, Deltimple, N, Kerherve, E, Dematos, M, Haddad, S
Format:	Artikel
Sprache:	eng
Schlagworte:	breakdown voltage Circuits Circuits and systems class EF2 power circuit class EF2 power oscillator CMOS CMOS analogue integrated circuits electric breakdown Electric potential Engineering Sciences feedback amplifiers feedback path frequency 150 MHz frequency 2.5 GHz integrated circuit noise Micro and nanotechnologies Microelectronics MOS capacitors MOS varactor Oscillators passive element passive networks phase noise power amplifier power integrated circuits power MOSFET Radio frequencies RF frequency size 130 nm standard CMOS technology transistor Tuning UHF integrated circuits UHF oscillators UHF power amplifiers varactors Voltage voltage 2.5 V voltage stress reduction
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