Transport signatures of surface potentials on three-dimensional topological insulators
The spin-momentum-locked nature of the robust surface states of three-dimensional topological insulators (3D TIs) makes them promising candidates for spintronics applications. Surface potentials which respect time-reversal symmetry can exist at the surface between a 3D TI and the trivial vacuum. The...
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Veröffentlicht in: | Physical review. B 2016-02, Vol.93 (8), Article 085422 |
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description | The spin-momentum-locked nature of the robust surface states of three-dimensional topological insulators (3D TIs) makes them promising candidates for spintronics applications. Surface potentials which respect time-reversal symmetry can exist at the surface between a 3D TI and the trivial vacuum. These potentials can distort the spin texture of the surface states while retaining their gapless nature. In this work, the effect of all such surface potentials on the spin textures is studied. Since a tunnel magnetoresistance signal carries the information of the spin texture, it is proposed that spin-polarized tunneling of electrons to a 3D TI surface can be used to uniquely identify the surface potentials and quantitatively characterize them. |
doi_str_mv | 10.1103/PhysRevB.93.085422 |
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Since a tunnel magnetoresistance signal carries the information of the spin texture, it is proposed that spin-polarized tunneling of electrons to a 3D TI surface can be used to uniquely identify the surface potentials and quantitatively characterize them.</description><subject>Condensed matter</subject><subject>Distortion</subject><subject>Insulators</subject><subject>Surface layer</subject><subject>Texture</subject><subject>Three dimensional</subject><subject>Topology</subject><subject>Transport</subject><issn>2469-9950</issn><issn>2469-9969</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNo9kE9LAzEQxYMoWGq_gKc9etk6m2STzVGL_6CgSPUa0nS2jWyTNckK_fauVD3NY3jzePMj5LKCeVUBu37ZHdIrft3OFZtDU3NKT8iEcqFKpYQ6_dc1nJNZSh8AUAlQEtSEvK-i8akPMRfJbb3JQ8RUhLZIQ2yNxaIPGX12phu3vsi7iFhu3B59csGbrsihD13YOjtq59PQmRxiuiBn7XiCs985JW_3d6vFY7l8fnha3CxLyyjPpaBQC245BUWRoVVrBkZaLmuga2kqRscPBBi23myEGUtz07Qga9UoZmuUbEqujrl9DJ8Dpqz3LlnsOuMxDElXDTQgea3EaKVHq40hpYit7qPbm3jQFegfjvqPo1ZMHzmybz-zaM8</recordid><startdate>20160216</startdate><enddate>20160216</enddate><creator>Roy, Sthitadhi</creator><creator>Das, Sourin</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>H8D</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20160216</creationdate><title>Transport signatures of surface potentials on three-dimensional topological insulators</title><author>Roy, Sthitadhi ; Das, Sourin</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c324t-620564c42092e3ec9b30a7c47502b7a13299660a3bdd6a1604a8f0759893c5e73</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Condensed matter</topic><topic>Distortion</topic><topic>Insulators</topic><topic>Surface layer</topic><topic>Texture</topic><topic>Three dimensional</topic><topic>Topology</topic><topic>Transport</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Roy, Sthitadhi</creatorcontrib><creatorcontrib>Das, Sourin</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Physical review. B</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Roy, Sthitadhi</au><au>Das, Sourin</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Transport signatures of surface potentials on three-dimensional topological insulators</atitle><jtitle>Physical review. B</jtitle><date>2016-02-16</date><risdate>2016</risdate><volume>93</volume><issue>8</issue><artnum>085422</artnum><issn>2469-9950</issn><eissn>2469-9969</eissn><abstract>The spin-momentum-locked nature of the robust surface states of three-dimensional topological insulators (3D TIs) makes them promising candidates for spintronics applications. Surface potentials which respect time-reversal symmetry can exist at the surface between a 3D TI and the trivial vacuum. These potentials can distort the spin texture of the surface states while retaining their gapless nature. In this work, the effect of all such surface potentials on the spin textures is studied. Since a tunnel magnetoresistance signal carries the information of the spin texture, it is proposed that spin-polarized tunneling of electrons to a 3D TI surface can be used to uniquely identify the surface potentials and quantitatively characterize them.</abstract><doi>10.1103/PhysRevB.93.085422</doi><oa>free_for_read</oa></addata></record> |
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subjects | Condensed matter Distortion Insulators Surface layer Texture Three dimensional Topology Transport |
title | Transport signatures of surface potentials on three-dimensional topological insulators |
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