Two-dimensional characterization of ion-implantation damage in GaN Schottky contacts using scanning internal photoemission microscopy

Nitrogen-ion-implantation damage on GaN has been clearly visualized using scanning internal photoemission microscopy. Ni Schottky contacts were formed on selectively N-ion-implanted n-GaN surfaces at 80 keV with an ion dose of 1 × 1014 or 1 × 1015 cm−2, and a photocurrent was detected by focusing an...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2016-04, Vol.55 (4S), p.4
Hauptverfasser:	Shiojima, Kenji, Murase, Shingo, Yamamoto, Shingo, Mishima, Tomoyoshi, Nakamura, Tohru
Format:	Artikel
Sprache:	eng
Schlagworte:	Contact Damage Gallium nitrides Microscopy Photocurrent Photoelectric effect Photoemission Scanning
Online-Zugang:	Volltext
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