Two-dimensional characterization of ion-implantation damage in GaN Schottky contacts using scanning internal photoemission microscopy
Nitrogen-ion-implantation damage on GaN has been clearly visualized using scanning internal photoemission microscopy. Ni Schottky contacts were formed on selectively N-ion-implanted n-GaN surfaces at 80 keV with an ion dose of 1 × 1014 or 1 × 1015 cm−2, and a photocurrent was detected by focusing an...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 2016-04, Vol.55 (4S), p.4 |
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| container_issue | 4S |
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| container_title | Japanese Journal of Applied Physics |
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| creator | Shiojima, Kenji Murase, Shingo Yamamoto, Shingo Mishima, Tomoyoshi Nakamura, Tohru |
| description | Nitrogen-ion-implantation damage on GaN has been clearly visualized using scanning internal photoemission microscopy. Ni Schottky contacts were formed on selectively N-ion-implanted n-GaN surfaces at 80 keV with an ion dose of 1 × 1014 or 1 × 1015 cm−2, and a photocurrent was detected by focusing and scanning a laser beam over the contacts. We found that the photocurrent decreased in the implanted regions due to an increase in the Schottky barrier and carrier depletion. Photocurrent maps showed that the induced damage did not spread from the implanted regions within the spatial resolution of the equipment. We confirmed that this method is a powerful tool for mapping implanted highly resistive regions. |
| doi_str_mv | 10.7567/JJAP.55.04EG05 |
| format | Article |
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Ni Schottky contacts were formed on selectively N-ion-implanted n-GaN surfaces at 80 keV with an ion dose of 1 × 1014 or 1 × 1015 cm−2, and a photocurrent was detected by focusing and scanning a laser beam over the contacts. We found that the photocurrent decreased in the implanted regions due to an increase in the Schottky barrier and carrier depletion. Photocurrent maps showed that the induced damage did not spread from the implanted regions within the spatial resolution of the equipment. 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J. Appl. Phys</addtitle><description>Nitrogen-ion-implantation damage on GaN has been clearly visualized using scanning internal photoemission microscopy. Ni Schottky contacts were formed on selectively N-ion-implanted n-GaN surfaces at 80 keV with an ion dose of 1 × 1014 or 1 × 1015 cm−2, and a photocurrent was detected by focusing and scanning a laser beam over the contacts. We found that the photocurrent decreased in the implanted regions due to an increase in the Schottky barrier and carrier depletion. Photocurrent maps showed that the induced damage did not spread from the implanted regions within the spatial resolution of the equipment. We confirmed that this method is a powerful tool for mapping implanted highly resistive regions.</description><subject>Contact</subject><subject>Damage</subject><subject>Gallium nitrides</subject><subject>Microscopy</subject><subject>Photocurrent</subject><subject>Photoelectric effect</subject><subject>Photoemission</subject><subject>Scanning</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNp1kD1PwzAQhi0EEqWwMnsEpBQntuNkrCooVBUgtczW1XFahyQOcSpUdv43jtIRpvvQc-_dvQhdh2QieCzuF4vp24TzCWEPc8JP0CikTASMxPwUjQiJwoClUXSOLpwrfBlzFo7Qz_rLBpmpdO2MraHEagctqE635hs638I2xz4EpmpKqLuhl0EFW41NjefwgldqZ7vu44CV9YDqHN47U2-xU1DXfWJqr9eLNx60ujKuX4Yro1rrlG0Ol-gsh9Lpq2Mco_fHh_XsKVi-zp9n02WgGBFdkAAFrTeMcRqHQtEwyjQHzVmmgeiUig0kFDaR4CSnNKUk1YqzKKIRFZlIGR2jm0G3ae3nXrtO-luULv1n2u6dDBOSkFjwJPboZED7G12rc9m0poL2IEMie79l77fkXA5--4HbYcDYRhZ23z_sZFFA00NsdeRkk-WevfuD_Uf4Fy9EkgA</recordid><startdate>20160401</startdate><enddate>20160401</enddate><creator>Shiojima, Kenji</creator><creator>Murase, Shingo</creator><creator>Yamamoto, Shingo</creator><creator>Mishima, Tomoyoshi</creator><creator>Nakamura, Tohru</creator><general>The Japan Society of Applied Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20160401</creationdate><title>Two-dimensional characterization of ion-implantation damage in GaN Schottky contacts using scanning internal photoemission microscopy</title><author>Shiojima, Kenji ; Murase, Shingo ; Yamamoto, Shingo ; Mishima, Tomoyoshi ; Nakamura, Tohru</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c407t-8a3aeeb4453617c312de5ae54dea0e937ba83ab2750f339309ec54223237d7943</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Contact</topic><topic>Damage</topic><topic>Gallium nitrides</topic><topic>Microscopy</topic><topic>Photocurrent</topic><topic>Photoelectric effect</topic><topic>Photoemission</topic><topic>Scanning</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Shiojima, Kenji</creatorcontrib><creatorcontrib>Murase, Shingo</creatorcontrib><creatorcontrib>Yamamoto, Shingo</creatorcontrib><creatorcontrib>Mishima, Tomoyoshi</creatorcontrib><creatorcontrib>Nakamura, Tohru</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Shiojima, Kenji</au><au>Murase, Shingo</au><au>Yamamoto, Shingo</au><au>Mishima, Tomoyoshi</au><au>Nakamura, Tohru</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Two-dimensional characterization of ion-implantation damage in GaN Schottky contacts using scanning internal photoemission microscopy</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><addtitle>Jpn. J. Appl. Phys</addtitle><date>2016-04-01</date><risdate>2016</risdate><volume>55</volume><issue>4S</issue><spage>4</spage><pages>4-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPB6</coden><abstract>Nitrogen-ion-implantation damage on GaN has been clearly visualized using scanning internal photoemission microscopy. Ni Schottky contacts were formed on selectively N-ion-implanted n-GaN surfaces at 80 keV with an ion dose of 1 × 1014 or 1 × 1015 cm−2, and a photocurrent was detected by focusing and scanning a laser beam over the contacts. We found that the photocurrent decreased in the implanted regions due to an increase in the Schottky barrier and carrier depletion. Photocurrent maps showed that the induced damage did not spread from the implanted regions within the spatial resolution of the equipment. We confirmed that this method is a powerful tool for mapping implanted highly resistive regions.</abstract><pub>The Japan Society of Applied Physics</pub><doi>10.7567/JJAP.55.04EG05</doi></addata></record> |
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| ispartof | Japanese Journal of Applied Physics, 2016-04, Vol.55 (4S), p.4 |
| issn | 0021-4922 1347-4065 |
| language | eng |
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| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | Contact Damage Gallium nitrides Microscopy Photocurrent Photoelectric effect Photoemission Scanning |
| title | Two-dimensional characterization of ion-implantation damage in GaN Schottky contacts using scanning internal photoemission microscopy |
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