Room-temperature wafer bonding of SiC-Si by modified surface activated bonding with sputtered Si nanolayer

A modified surface activated bonding (SAB) with Fe-Si multi-nanolayers is expected to achieve the wafer bonding of SiC to various materials. However, Fe diffusion, which affects device performance, cannot be avoided during some annealing processes. In this work, the room-temperature wafer bonding of...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2016-04, Vol.55 (4S), p.4
Hauptverfasser:	Mu, Fengwen, Iguchi, Kenichi, Nakazawa, Haruo, Takahashi, Yoshikazu, Fujino, Masahisa, Suga, Tadatomo
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Bonding Bonding strength Nanostructure Silicon Silicon carbide Surface chemistry Wafers
Online-Zugang:	Volltext
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