Optimization of dressed-photon–phonon-assisted annealing for fabricating GaP light-emitting diodes

Using the two-level two-state model, we analyzed the characteristics of enhanced electroluminescence intensity from a GaP LED fabricated by dressed-photon–phonon-assisted annealing. In this model, we utilized the fact that the adiabatic potential barrier of the electronic excited level in configurat...

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Veröffentlicht in:	Applied physics. A, Materials science & processing Materials science & processing, 2015-12, Vol.121 (4), p.1395-1401
Hauptverfasser:	Kim, Jun Hyoung, Kawazoe, Tadashi, Ohtsu, Motoichi
Format:	Artikel
Sprache:	eng
Schlagworte:	Adiabatic flow Annealing Characterization and Evaluation of Materials Condensed Matter Physics Electronics Excitation Ground level Invited Paper Light-emitting diodes Machines Manufacturing Nanotechnology Optical and Electronic Materials Optimization Physics Physics and Astronomy Processes Stimulated emission Surfaces and Interfaces Thin Films
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