Nonequilibrium plasmon emission drives ultrafast carrier relaxation dynamics in photoexcited graphene
The fast decay of carrier inversion in photoexcited graphene has been attributed to optical phonon emission and Auger recombination. Plasmon emission provides another pathway that, as we show here, drives the carrier relaxation dynamics on ultrafast time scales. In studying the nonequilibrium relaxa...
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| Veröffentlicht in: | Physical review. B 2016-01, Vol.93 (4) |
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| container_title | Physical review. B |
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| creator | Hamm, J M Page, A F Bravo-Abad, J Garcia-Vidal, F J Hess, O |
| description | The fast decay of carrier inversion in photoexcited graphene has been attributed to optical phonon emission and Auger recombination. Plasmon emission provides another pathway that, as we show here, drives the carrier relaxation dynamics on ultrafast time scales. In studying the nonequilibrium relaxation dynamics we find that plasmon emission effectively converts inversion into hot carriers, whose energy is then extracted by optical phonon emission. This mechanism not only explains the observed femtosecond lifetime of inversion but also offers the prospect for atomically thin ultrafast plasmon emitters. |
| doi_str_mv | 10.1103/PhysRevB.93.041408 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_miscellaneous_1808058826</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1808058826</sourcerecordid><originalsourceid>FETCH-LOGICAL-p118t-61bad365587037e46b068308d92b4be4efcb81e1f815c1bcca8fb19921c2355c3</originalsourceid><addsrcrecordid>eNo9j0tLAzEURoMoWGr_gKss3Uy9dzKTJkstvqCoiK5LkrljI_Nqkintv7eouDpncfjgY-wSYY4I4vp1c4hvtLudazGHAgtQJ2ySF1JnWkt9-u8lnLNZjF8AgBL0AvSE0XPf0Xb0jbfBjy0fGhPbvuPU-hj9UargdxT52KRgahMTdyYET4EHaszepJ_m0JnWu8h9x4dNn3raO5-o4p_BDBvq6IKd1aaJNPvjlH3c370vH7PVy8PT8maVDYgqZRKtqYQsS7UAsaBCWpBKgKp0bgtLBdXOKiSsFZYOrXNG1Ra1ztHloiydmLKr390h9NuRYlofbzhqGtNRP8Y1KlBQKpVL8Q3vv19F</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1808058826</pqid></control><display><type>article</type><title>Nonequilibrium plasmon emission drives ultrafast carrier relaxation dynamics in photoexcited graphene</title><source>American Physical Society Journals</source><creator>Hamm, J M ; Page, A F ; Bravo-Abad, J ; Garcia-Vidal, F J ; Hess, O</creator><creatorcontrib>Hamm, J M ; Page, A F ; Bravo-Abad, J ; Garcia-Vidal, F J ; Hess, O</creatorcontrib><description>The fast decay of carrier inversion in photoexcited graphene has been attributed to optical phonon emission and Auger recombination. Plasmon emission provides another pathway that, as we show here, drives the carrier relaxation dynamics on ultrafast time scales. In studying the nonequilibrium relaxation dynamics we find that plasmon emission effectively converts inversion into hot carriers, whose energy is then extracted by optical phonon emission. This mechanism not only explains the observed femtosecond lifetime of inversion but also offers the prospect for atomically thin ultrafast plasmon emitters.</description><identifier>ISSN: 2469-9950</identifier><identifier>EISSN: 2469-9969</identifier><identifier>DOI: 10.1103/PhysRevB.93.041408</identifier><language>eng</language><subject>Carriers ; Condensed matter ; Dynamics ; Emission ; Emission analysis ; Graphene ; Inversions ; Plasmons</subject><ispartof>Physical review. B, 2016-01, Vol.93 (4)</ispartof><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Hamm, J M</creatorcontrib><creatorcontrib>Page, A F</creatorcontrib><creatorcontrib>Bravo-Abad, J</creatorcontrib><creatorcontrib>Garcia-Vidal, F J</creatorcontrib><creatorcontrib>Hess, O</creatorcontrib><title>Nonequilibrium plasmon emission drives ultrafast carrier relaxation dynamics in photoexcited graphene</title><title>Physical review. B</title><description>The fast decay of carrier inversion in photoexcited graphene has been attributed to optical phonon emission and Auger recombination. Plasmon emission provides another pathway that, as we show here, drives the carrier relaxation dynamics on ultrafast time scales. In studying the nonequilibrium relaxation dynamics we find that plasmon emission effectively converts inversion into hot carriers, whose energy is then extracted by optical phonon emission. This mechanism not only explains the observed femtosecond lifetime of inversion but also offers the prospect for atomically thin ultrafast plasmon emitters.</description><subject>Carriers</subject><subject>Condensed matter</subject><subject>Dynamics</subject><subject>Emission</subject><subject>Emission analysis</subject><subject>Graphene</subject><subject>Inversions</subject><subject>Plasmons</subject><issn>2469-9950</issn><issn>2469-9969</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNo9j0tLAzEURoMoWGr_gKss3Uy9dzKTJkstvqCoiK5LkrljI_Nqkintv7eouDpncfjgY-wSYY4I4vp1c4hvtLudazGHAgtQJ2ySF1JnWkt9-u8lnLNZjF8AgBL0AvSE0XPf0Xb0jbfBjy0fGhPbvuPU-hj9UargdxT52KRgahMTdyYET4EHaszepJ_m0JnWu8h9x4dNn3raO5-o4p_BDBvq6IKd1aaJNPvjlH3c370vH7PVy8PT8maVDYgqZRKtqYQsS7UAsaBCWpBKgKp0bgtLBdXOKiSsFZYOrXNG1Ra1ztHloiydmLKr390h9NuRYlofbzhqGtNRP8Y1KlBQKpVL8Q3vv19F</recordid><startdate>20160115</startdate><enddate>20160115</enddate><creator>Hamm, J M</creator><creator>Page, A F</creator><creator>Bravo-Abad, J</creator><creator>Garcia-Vidal, F J</creator><creator>Hess, O</creator><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>H8D</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20160115</creationdate><title>Nonequilibrium plasmon emission drives ultrafast carrier relaxation dynamics in photoexcited graphene</title><author>Hamm, J M ; Page, A F ; Bravo-Abad, J ; Garcia-Vidal, F J ; Hess, O</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p118t-61bad365587037e46b068308d92b4be4efcb81e1f815c1bcca8fb19921c2355c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Carriers</topic><topic>Condensed matter</topic><topic>Dynamics</topic><topic>Emission</topic><topic>Emission analysis</topic><topic>Graphene</topic><topic>Inversions</topic><topic>Plasmons</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hamm, J M</creatorcontrib><creatorcontrib>Page, A F</creatorcontrib><creatorcontrib>Bravo-Abad, J</creatorcontrib><creatorcontrib>Garcia-Vidal, F J</creatorcontrib><creatorcontrib>Hess, O</creatorcontrib><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Physical review. B</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Hamm, J M</au><au>Page, A F</au><au>Bravo-Abad, J</au><au>Garcia-Vidal, F J</au><au>Hess, O</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Nonequilibrium plasmon emission drives ultrafast carrier relaxation dynamics in photoexcited graphene</atitle><jtitle>Physical review. B</jtitle><date>2016-01-15</date><risdate>2016</risdate><volume>93</volume><issue>4</issue><issn>2469-9950</issn><eissn>2469-9969</eissn><abstract>The fast decay of carrier inversion in photoexcited graphene has been attributed to optical phonon emission and Auger recombination. Plasmon emission provides another pathway that, as we show here, drives the carrier relaxation dynamics on ultrafast time scales. In studying the nonequilibrium relaxation dynamics we find that plasmon emission effectively converts inversion into hot carriers, whose energy is then extracted by optical phonon emission. This mechanism not only explains the observed femtosecond lifetime of inversion but also offers the prospect for atomically thin ultrafast plasmon emitters.</abstract><doi>10.1103/PhysRevB.93.041408</doi><oa>free_for_read</oa></addata></record> |
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| subjects | Carriers Condensed matter Dynamics Emission Emission analysis Graphene Inversions Plasmons |
| title | Nonequilibrium plasmon emission drives ultrafast carrier relaxation dynamics in photoexcited graphene |
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