Deposition of heteroepitaxial layers of topological insulator Bi sub(2)Se sub(3) in the trimethylbismuth-isopropylselenide-hydrogen system on the (0001) Al sub(2)O sub(3) and (100) GaAs substrates

Thin solid layers that are formed upon heating of the gaseous trimethylbismuth-isopropylselenide-hydrogen system on the (0001) Al sub(2)O sub(3) and singular and vicinal (100) GaAs surfaces are studied. The conditions for deposition of metal Bi and phases of Bi sub(4)Se sub(3), BiSe, and topological...

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Veröffentlicht in:	Journal of communications technology & electronics 2016-02, Vol.61 (2), p.183-189
Hauptverfasser:	Kuznetsov, P I, Luzanov, V A, Yakusheva, G G, Temiryazev, A G, Shchamkhalova, B S, Zhitov, V A, Zakharov, LYu
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum oxide Deposition Gallium arsenide Heating Insulators Phases Thin films Topology
Online-Zugang:	Volltext
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