Probing the Metal-Insulator Transition in BaTiO_{3} by Electrostatic Doping

The metal-to-insulator transition in BaTiO_{3} is investigated using electrostatic doping, which avoids effects from disorder and strain that would accompany chemical doping. SmTiO_{3}/BaTiO_{3}/SrTiO_{3} heterostructures are doped with a constant sheet carrier density of 3×10^{14}  cm^{-2} that is...

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Veröffentlicht in:Physical review letters 2016-07, Vol.117 (3), p.037602-037602
Hauptverfasser: Raghavan, Santosh, Zhang, Jack Y, Shoron, Omor F, Stemmer, Susanne
Format: Artikel
Sprache:eng
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