Injection-induced, tunable all-optical gating in a two-state quantum dot laser

We demonstrate a tunable all-optical gating phenomenon in a single-section quantum dot laser. The free-running operation of the device is emission from the excited state. Optical injection into the ground state of the material can induce a switch to emission from the ground state with complete suppr...

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Veröffentlicht in:Optics letters 2016-08, Vol.41 (15), p.3555-3558
Hauptverfasser: Viktorov, E A, Dubinkin, I, Fedorov, N, Erneux, T, Tykalewicz, B, Hegarty, S P, Huyet, G, Goulding, D, Kelleher, B
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container_end_page 3558
container_issue 15
container_start_page 3555
container_title Optics letters
container_volume 41
creator Viktorov, E A
Dubinkin, I
Fedorov, N
Erneux, T
Tykalewicz, B
Hegarty, S P
Huyet, G
Goulding, D
Kelleher, B
description We demonstrate a tunable all-optical gating phenomenon in a single-section quantum dot laser. The free-running operation of the device is emission from the excited state. Optical injection into the ground state of the material can induce a switch to emission from the ground state with complete suppression of the excited state. If the master laser is detuned from the ground-state emitting frequency, a periodic train of ground-state dropouts can be obtained. These dropouts act as gates for excited-state pulsations: during the dropout, the gate is opened and gain is made available for the excited state, and the gate is closed again when the dropout ends. Numerical simulations using a rate equation model are in excellent agreement with experimental results.
doi_str_mv 10.1364/OL.41.003555
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title Injection-induced, tunable all-optical gating in a two-state quantum dot laser
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