Polarization engineering of c-plane InGaN quantum wells by pulsed-flow growth of AlInGaN barriers

Polarization‐field reduction in c‐plane InGaN multi‐quantum well (MQW) structures is achieved by pulsed‐flow growth of quaternary AlInGaN barriers using metalorganic vapor phase epitaxy (MOVPE). The pulsed‐flow growth allows for precise control of the quaternary composition at very low growth rate....

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Veröffentlicht in:	Physica Status Solidi. B: Basic Solid State Physics 2016-01, Vol.253 (1), p.118-125
Hauptverfasser:	Neugebauer, Silvio, Metzner, Sebastian, Bläsing, Jürgen, Bertram, Frank, Dadgar, Armin, Christen, Jürgen, Strittmatter, André
Format:	Artikel
Sprache:	eng
Schlagworte:	Barriers Gallium nitrides III-nitrides Indium gallium nitrides multiple quantum wells Polarization Quantum wells Reduction Spectral emittance Time resolved X-ray diffraction
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