Dependence of the SET switching variability on the initial state in HfO sub(x)-based ReRAM

For any application of redox-based resistive switching devices understanding of variability is of major interest. In this work, we analyze the dependence of the SET switching time in pulse measurements of TiN/HfO sub(x)/Pt devices on the initial state before switching. The distribution of the measur...

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Veröffentlicht in:	Physica status solidi. A, Applications and materials science Applications and materials science, 2016-02, Vol.213 (2), p.316-319
Hauptverfasser:	La Torre, Camilla, Fleck, Karsten, Starschich, Sergej, Linn, Eike, Waser, Rainer, Menzel, Stephan
Format:	Artikel
Sprache:	eng
Schlagworte:	Descriptions Devices Electric potential Origins Polarity Stochasticity Switching Voltage
Online-Zugang:	Volltext
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