Growth of semipolar {20-21} GaN and {20-2-1} GaN for GaN substrate

In this article, we present a semipolar {20–21} GaN layer and {20–2–1} GaN layer for large GaN substrates. The {20–21} GaN layer was fabricated on {22–43} patterned sapphire substrates (PSSs) by metal‐organic vapor‐phase epitaxy (MOVPE) and hydride vapor‐phase epitaxy (HVPE). We found that the surfa...

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Veröffentlicht in:	Physica Status Solidi. B: Basic Solid State Physics 2016-01, Vol.253 (1), p.36-45
Hauptverfasser:	Hashimoto, Yasuhiro, Yamane, Keisuke, Okada, Narihito, Tadatomo, Kazuyuki
Format:	Artikel
Sprache:	eng
Schlagworte:	Crack propagation Crystal growth Density dislocations Epitaxy Gallium nitrides GaN substrate GaN surfaces hydride vapor-phase epitaxy semipolar GaN Silicon dioxide Solid state physics Substrates
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