Indium antimonide based HEMT for RF applications

Indium antimonide based HEMT for RF applications

We report on an indium antimonide high electron mobility transistor with record cut-off frequency characteristics. For high frequency response it is important to minimize parasitic resistance and capacitance to improve short-channel effects. For analog applications adequate pinch-off behavior is dem...

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Veröffentlicht in:Journal of semiconductors 2014-11, Vol.35 (11), p.20-22
Hauptverfasser: Subash, T. D., Gnanasekaran, T.
Format: Artikel
Sprache:eng
Schlagworte:
CAD工具
Cut-off
Devices
Electron density
Electron mobility
HEMT
High electron mobility transistors
Indium antimonides
RF应用
Semiconductor devices
Semiconductors
Synopsys公司
截止频率
短沟道效应
锑化铟
高电子迁移率晶体管
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container_title Journal of semiconductors
container_volume 35
creator Subash, T. D.
Gnanasekaran, T.
description We report on an indium antimonide high electron mobility transistor with record cut-off frequency characteristics. For high frequency response it is important to minimize parasitic resistance and capacitance to improve short-channel effects. For analog applications adequate pinch-off behavior is demonstrated. For proper device scaling we need high electron mobility and high electron density. Toward this end, the device design features and simulation are carried out by the Synopsys TCAD tool. A 30 nm InSb HEMT exhibits an excellent cut-off frequency of 586 GHz. To the knowledge of the authors, the obtained cut-off frequency is the highest ever reported in any FET on any material system.
doi_str_mv 10.1088/1674-4926/35/11/113004
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source IOP Publishing Journals; Alma/SFX Local Collection
subjects CAD工具
Cut-off
Devices
Electron density
Electron mobility
HEMT
High electron mobility transistors
Indium antimonides
RF应用
Semiconductor devices
Semiconductors
Synopsys公司
截止频率
短沟道效应
锑化铟
高电子迁移率晶体管
title Indium antimonide based HEMT for RF applications
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