Hyperbranched polysiloxane (HBPSi)-based polyimide films with ultralow dielectric permittivity, desirable mechanical and thermal properties
Low-dielectric polyimide (PI) is on high demand in the next generation of high-density and high-speed integrated circuits. The introduction of fluorine or pores into PIs has been reported to efficiently obtain low-dielectric properties, but unavoidably deteriorate the mechanical and/or thermal prope...
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Veröffentlicht in: | Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2016-01, Vol.4 (11), p.2134-2146 |
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Format: | Artikel |
Sprache: | eng |
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