Hyperbranched polysiloxane (HBPSi)-based polyimide films with ultralow dielectric permittivity, desirable mechanical and thermal properties

Low-dielectric polyimide (PI) is on high demand in the next generation of high-density and high-speed integrated circuits. The introduction of fluorine or pores into PIs has been reported to efficiently obtain low-dielectric properties, but unavoidably deteriorate the mechanical and/or thermal prope...

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Veröffentlicht in:Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2016-01, Vol.4 (11), p.2134-2146
Hauptverfasser: Lei, Xingfeng, Chen, Yanhui, Qiao, Mingtao, Tian, Lidong, Zhang, Qiuyu
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Sprache:eng
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