Hyperbranched polysiloxane (HBPSi)-based polyimide films with ultralow dielectric permittivity, desirable mechanical and thermal properties

Low-dielectric polyimide (PI) is on high demand in the next generation of high-density and high-speed integrated circuits. The introduction of fluorine or pores into PIs has been reported to efficiently obtain low-dielectric properties, but unavoidably deteriorate the mechanical and/or thermal prope...

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Veröffentlicht in:Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2016-01, Vol.4 (11), p.2134-2146
Hauptverfasser: Lei, Xingfeng, Chen, Yanhui, Qiao, Mingtao, Tian, Lidong, Zhang, Qiuyu
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container_issue 11
container_start_page 2134
container_title Journal of materials chemistry. C, Materials for optical and electronic devices
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creator Lei, Xingfeng
Chen, Yanhui
Qiao, Mingtao
Tian, Lidong
Zhang, Qiuyu
description Low-dielectric polyimide (PI) is on high demand in the next generation of high-density and high-speed integrated circuits. The introduction of fluorine or pores into PIs has been reported to efficiently obtain low-dielectric properties, but unavoidably deteriorate the mechanical and/or thermal properties. Therefore, it is a great challenge for PI to decrease its D k and simultaneously maintain its mechanical and thermal properties. Herein, a series of robust PI films were fabricated by copolymerizing amine-functionalized hyperbranched polysiloxane (HBPSi) with pyromellitic dianhydride (PMDA) and 4,4′-oxydianiline (ODA). The outstanding dielectric properties were achieved in a 35 wt% HBPSi PI film, which exhibits a D k as low as 2.24 (1 MHz), mainly owing to the enhanced free volume and dielectric confinement effect afforded by the bulky HBPSi. Meanwhile, 35 wt% HBPSi PI demonstrates remarkable thermal stability and admirable mechanical properties, with the glass transition temperature of 388 °C, 5% weight loss temperature in argon flow up to 554 °C, a tensile strength of 80.6 MPa, elongation at break of 13.7% and a tensile modulus of 1.36 GPa. It also demonstrates conspicuous film homogeneity and planarity with the surface roughness as low as 0.42 nm and good moisture resistance with water uptake less than 1.5%. The prominent comprehensive properties make HBPSi PI a strong candidate for the future interlayer dielectrics. A 35 wt% HBPSi polyimide film exhibits an ultralow dielectric permittivity (2.24), accompanied by the most desirable comprehensive properties.
doi_str_mv 10.1039/c5tc03391h
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source Royal Society Of Chemistry Journals; Alma/SFX Local Collection
subjects Demand
Dielectric properties
Fluorine
Homogeneity
Polyimide resins
Polysiloxanes
Thermal properties
Weight loss
title Hyperbranched polysiloxane (HBPSi)-based polyimide films with ultralow dielectric permittivity, desirable mechanical and thermal properties
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