A novel SOI pressure sensor for high temperature application
The silicon on insulator（SOI） high temperature pressure sensor is a novel pressure sensor with highperformance and high-quality. A structure of a SOI high-temperature pressure sensor is presented in this paper.The key factors including doping concentration and power are analyzed. The process of the...
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| Veröffentlicht in: | Journal of semiconductors 2015, Vol.36 (1), p.120-124 |
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| container_title | Journal of semiconductors |
| container_volume | 36 |
| creator | 李赛男 梁庭 王伟 洪应平 郑庭丽 熊继军 |
| description | The silicon on insulator（SOI） high temperature pressure sensor is a novel pressure sensor with highperformance and high-quality. A structure of a SOI high-temperature pressure sensor is presented in this paper.The key factors including doping concentration and power are analyzed. The process of the sensor is designed with the critical process parameters set appropriately. The test result at room temperature and high temperature shows that nonlinear error below is 0.1%, and hysteresis is less than 0.5%. High temperature measuring results show that the sensor can be used for from room temperature to 350℃ in harsh environments. It offers a reference for the development of high temperature piezoresistive pressure sensors. |
| doi_str_mv | 10.1088/1674-4926/36/1/014014 |
| format | Article |
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| ispartof | Journal of semiconductors, 2015, Vol.36 (1), p.120-124 |
| issn | 1674-4926 |
| language | eng |
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| source | Institute of Physics Journals; Alma/SFX Local Collection |
| subjects | Hysteresis Insulators Nonlinearity Pressure sensors Process parameters Semiconductors Sensors Silicon SOI 压阻式压力传感器 工艺参数 应用 掺杂浓度 非线性误差 高温压力传感器 高温测量 |
| title | A novel SOI pressure sensor for high temperature application |
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