Advantages of InGaN/GaN light emitting diodes with p-GaN grown under high pressure

The advantages of InGaN/GaN light emitting diodes （LEDs） with p-GaN grown under high pressures are studied. It is shown that the high growth pressure could lead to better electronic properties of p-GaN layers due to the eliminated compensation effect. The contact resistivity of p-GaN layers are decr...

Ausführliche Beschreibung