An Indium-Free Anode for Large-Area Flexible OLEDs: Defect-Free Transparent Conductive Zinc Tin Oxide

Flexible large‐area organic light‐emitting diodes (OLEDs) require highly conductive and transparent anodes for efficient and uniform light emission. Tin‐doped indium oxide (ITO) is the standard anode in industry. However, due to the scarcity of indium, alternative anodes that eliminate its use are h...

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Veröffentlicht in:Advanced functional materials 2016-01, Vol.26 (3), p.384-392
Hauptverfasser: Morales-Masis, Monica, Dauzou, Fabien, Jeangros, Quentin, Dabirian, Ali, Lifka, Herbert, Gierth, Rainald, Ruske, Manfred, Moet, Date, Hessler-Wyser, Aïcha, Ballif, Christophe
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container_end_page 392
container_issue 3
container_start_page 384
container_title Advanced functional materials
container_volume 26
creator Morales-Masis, Monica
Dauzou, Fabien
Jeangros, Quentin
Dabirian, Ali
Lifka, Herbert
Gierth, Rainald
Ruske, Manfred
Moet, Date
Hessler-Wyser, Aïcha
Ballif, Christophe
description Flexible large‐area organic light‐emitting diodes (OLEDs) require highly conductive and transparent anodes for efficient and uniform light emission. Tin‐doped indium oxide (ITO) is the standard anode in industry. However, due to the scarcity of indium, alternative anodes that eliminate its use are highly desired. Here an indium‐free anode is developed by a combinatorial study of zinc oxide (ZnO) and tin oxide (SnO2), both composed of earth‐abundant elements. The optimized Zn–Sn–O (ZTO) films have electron mobilities of up to 21 cm2 V−1 s−1, a conductivity of 245 S cm−1, and
doi_str_mv 10.1002/adfm.201503753
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Tin‐doped indium oxide (ITO) is the standard anode in industry. However, due to the scarcity of indium, alternative anodes that eliminate its use are highly desired. Here an indium‐free anode is developed by a combinatorial study of zinc oxide (ZnO) and tin oxide (SnO2), both composed of earth‐abundant elements. The optimized Zn–Sn–O (ZTO) films have electron mobilities of up to 21 cm2 V−1 s−1, a conductivity of 245 S cm−1, and &lt;5% absorptance in the visible range of the spectrum. The high electron mobilities and low surface roughness (&lt;0.2 nm) are achieved by producing dense and void‐free amorphous layers as confirmed by transmission electron microscopy. These ZTO layers are evaluated for OLEDs in two anode configurations: i) 10 cm2 devices with ZTO/Ag/ZTO and ii) 41 cm2 devices with ZTO plus a metal grid. The ZTO layers are compatible with OLED processing steps and large‐area white OLEDs fabricated with the ZTO/grid anode show better performance than those with ITO/grid anodes. These results confirm that ZTO has the potential as an In‐free and Earth‐abundant alternative to ITO for large‐area flexible OLEDs. An indium‐free anode is developed by a ZnO–SnO2 combinatorial study. The optimized Zn–Sn–O (ZTO) compound presents a void‐free amorphous microstructure, low roughness, high electron mobility, and &lt;5% visible range absorptance. 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Funct. Mater</addtitle><description>Flexible large‐area organic light‐emitting diodes (OLEDs) require highly conductive and transparent anodes for efficient and uniform light emission. Tin‐doped indium oxide (ITO) is the standard anode in industry. However, due to the scarcity of indium, alternative anodes that eliminate its use are highly desired. Here an indium‐free anode is developed by a combinatorial study of zinc oxide (ZnO) and tin oxide (SnO2), both composed of earth‐abundant elements. The optimized Zn–Sn–O (ZTO) films have electron mobilities of up to 21 cm2 V−1 s−1, a conductivity of 245 S cm−1, and &lt;5% absorptance in the visible range of the spectrum. The high electron mobilities and low surface roughness (&lt;0.2 nm) are achieved by producing dense and void‐free amorphous layers as confirmed by transmission electron microscopy. These ZTO layers are evaluated for OLEDs in two anode configurations: i) 10 cm2 devices with ZTO/Ag/ZTO and ii) 41 cm2 devices with ZTO plus a metal grid. The ZTO layers are compatible with OLED processing steps and large‐area white OLEDs fabricated with the ZTO/grid anode show better performance than those with ITO/grid anodes. These results confirm that ZTO has the potential as an In‐free and Earth‐abundant alternative to ITO for large‐area flexible OLEDs. An indium‐free anode is developed by a ZnO–SnO2 combinatorial study. The optimized Zn–Sn–O (ZTO) compound presents a void‐free amorphous microstructure, low roughness, high electron mobility, and &lt;5% visible range absorptance. Large‐area (41 cm2) flexible organic light‐emitting diodes (OLEDs) fabricated with a ZTO/grid anode outperform those with a Sn‐doped In2O3 (ITO)/grid anode, confirming the industrial application potential of ZTO.</description><subject>Anodes</subject><subject>Combinatorial analysis</subject><subject>Devices</subject><subject>Electron mobility</subject><subject>flexible OLEDs</subject><subject>Indium oxides</subject><subject>indium-free transparent electrodes</subject><subject>large-area white OLEDs</subject><subject>Organic light emitting diodes</subject><subject>TEM</subject><subject>Tin oxides</subject><subject>transparent conductive oxides</subject><subject>Zinc</subject><issn>1616-301X</issn><issn>1616-3028</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNqFkD1PwzAQhiMEEqWwMntkSfHF-WSLWtIiFcpQPsRiOfEZGVKn2Cm0_56goIqNySff89zpXs87BzoCSoNLIdVqFFCIKEsiduANIIbYZzRID_c1PB97J869UQpJwsKBh7khN0bqzcovLCLJTSORqMaSubCv6OcWBSlq3OqyRrKYX0_cFZmgwqrthaUVxq2FRdOScWPkpmr1J5IXbSqy1IYstlriqXekRO3w7Pcdeg_F9XI88-eL6c04n_tVmMXML1UJpaIySNIo7X6EBBnKMs0oEyrqDokoiCDGqNtPy6proQIIkWVJGAOGbOhd9HPXtvnYoGv5SrsK61oYbDaOQ0ppmMTAoENHPVrZxjmLiq-tXgm740D5T578J0--z7MTsl740jXu_qF5Pilu_7p-72rX4nbvCvvO46Qj-NPdlGePs-msCEJ-z74BDA6Hqw</recordid><startdate>20160120</startdate><enddate>20160120</enddate><creator>Morales-Masis, Monica</creator><creator>Dauzou, Fabien</creator><creator>Jeangros, Quentin</creator><creator>Dabirian, Ali</creator><creator>Lifka, Herbert</creator><creator>Gierth, Rainald</creator><creator>Ruske, Manfred</creator><creator>Moet, Date</creator><creator>Hessler-Wyser, Aïcha</creator><creator>Ballif, Christophe</creator><general>Blackwell Publishing Ltd</general><scope>BSCLL</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20160120</creationdate><title>An Indium-Free Anode for Large-Area Flexible OLEDs: Defect-Free Transparent Conductive Zinc Tin Oxide</title><author>Morales-Masis, Monica ; Dauzou, Fabien ; Jeangros, Quentin ; Dabirian, Ali ; Lifka, Herbert ; Gierth, Rainald ; Ruske, Manfred ; Moet, Date ; Hessler-Wyser, Aïcha ; Ballif, Christophe</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c4963-bfb1bf0d27858496ad1d4db8903af5028501a26e5efe0bc4dbef114e397461e43</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Anodes</topic><topic>Combinatorial analysis</topic><topic>Devices</topic><topic>Electron mobility</topic><topic>flexible OLEDs</topic><topic>Indium oxides</topic><topic>indium-free transparent electrodes</topic><topic>large-area white OLEDs</topic><topic>Organic light emitting diodes</topic><topic>TEM</topic><topic>Tin oxides</topic><topic>transparent conductive oxides</topic><topic>Zinc</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Morales-Masis, Monica</creatorcontrib><creatorcontrib>Dauzou, Fabien</creatorcontrib><creatorcontrib>Jeangros, Quentin</creatorcontrib><creatorcontrib>Dabirian, Ali</creatorcontrib><creatorcontrib>Lifka, Herbert</creatorcontrib><creatorcontrib>Gierth, Rainald</creatorcontrib><creatorcontrib>Ruske, Manfred</creatorcontrib><creatorcontrib>Moet, Date</creatorcontrib><creatorcontrib>Hessler-Wyser, Aïcha</creatorcontrib><creatorcontrib>Ballif, Christophe</creatorcontrib><collection>Istex</collection><collection>CrossRef</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Advanced functional materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Morales-Masis, Monica</au><au>Dauzou, Fabien</au><au>Jeangros, Quentin</au><au>Dabirian, Ali</au><au>Lifka, Herbert</au><au>Gierth, Rainald</au><au>Ruske, Manfred</au><au>Moet, Date</au><au>Hessler-Wyser, Aïcha</au><au>Ballif, Christophe</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>An Indium-Free Anode for Large-Area Flexible OLEDs: Defect-Free Transparent Conductive Zinc Tin Oxide</atitle><jtitle>Advanced functional materials</jtitle><addtitle>Adv. Funct. Mater</addtitle><date>2016-01-20</date><risdate>2016</risdate><volume>26</volume><issue>3</issue><spage>384</spage><epage>392</epage><pages>384-392</pages><issn>1616-301X</issn><eissn>1616-3028</eissn><abstract>Flexible large‐area organic light‐emitting diodes (OLEDs) require highly conductive and transparent anodes for efficient and uniform light emission. Tin‐doped indium oxide (ITO) is the standard anode in industry. However, due to the scarcity of indium, alternative anodes that eliminate its use are highly desired. Here an indium‐free anode is developed by a combinatorial study of zinc oxide (ZnO) and tin oxide (SnO2), both composed of earth‐abundant elements. The optimized Zn–Sn–O (ZTO) films have electron mobilities of up to 21 cm2 V−1 s−1, a conductivity of 245 S cm−1, and &lt;5% absorptance in the visible range of the spectrum. The high electron mobilities and low surface roughness (&lt;0.2 nm) are achieved by producing dense and void‐free amorphous layers as confirmed by transmission electron microscopy. These ZTO layers are evaluated for OLEDs in two anode configurations: i) 10 cm2 devices with ZTO/Ag/ZTO and ii) 41 cm2 devices with ZTO plus a metal grid. The ZTO layers are compatible with OLED processing steps and large‐area white OLEDs fabricated with the ZTO/grid anode show better performance than those with ITO/grid anodes. These results confirm that ZTO has the potential as an In‐free and Earth‐abundant alternative to ITO for large‐area flexible OLEDs. An indium‐free anode is developed by a ZnO–SnO2 combinatorial study. The optimized Zn–Sn–O (ZTO) compound presents a void‐free amorphous microstructure, low roughness, high electron mobility, and &lt;5% visible range absorptance. Large‐area (41 cm2) flexible organic light‐emitting diodes (OLEDs) fabricated with a ZTO/grid anode outperform those with a Sn‐doped In2O3 (ITO)/grid anode, confirming the industrial application potential of ZTO.</abstract><pub>Blackwell Publishing Ltd</pub><doi>10.1002/adfm.201503753</doi><tpages>9</tpages></addata></record>
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subjects Anodes
Combinatorial analysis
Devices
Electron mobility
flexible OLEDs
Indium oxides
indium-free transparent electrodes
large-area white OLEDs
Organic light emitting diodes
TEM
Tin oxides
transparent conductive oxides
Zinc
title An Indium-Free Anode for Large-Area Flexible OLEDs: Defect-Free Transparent Conductive Zinc Tin Oxide
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