Temporospatial Control of Graphene Wettability

Temporospatial Control of Graphene Wettability

The reversible migration of adatoms along a basal plane of graphene under electrical bias is experimentally demonstrated. Single‐layer graphene oxide with partial oxygen adatom coverage is utilized for this demonstration. The intensity ratio of G and G′ Raman modes is used to determine the oxygen ad...

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Veröffentlicht in:Advanced materials (Weinheim) 2016-01, Vol.28 (4), p.661-667
Hauptverfasser: Vijayarangamuthu, Kalimuthu, Ahn, Seungbae, Seo, Hyungtak, Yoon, Sang-Hee, Park, Cheol-Min, Jeon, Ki-Joon
Format: Artikel
Sprache:eng
Schlagworte:
adatoms
Basal plane
Bias
Graphene
graphene oxide
Migration
Oxides
Raman
single layers
Wettability
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Zusammenfassung:The reversible migration of adatoms along a basal plane of graphene under electrical bias is experimentally demonstrated. Single‐layer graphene oxide with partial oxygen adatom coverage is utilized for this demonstration. The intensity ratio of G and G′ Raman modes is used to determine the oxygen adatoms migration. Finally, reversible wettability property of graphene due to oxygen adatom migration is demonstrated.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201503444