A novel multiple super junction power device structure with low specific on-resistance
A novel multiple super junction （MS J） LDMOS power device is proposed to decrease Ron due to lateral and vertical interactions between the N-pillar and P-pillar. In the studied device： multiple layers of SJ are introduced oppositely under surface S J; when compared with 2D-depleting of the conventio...
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| Veröffentlicht in: | Journal of semiconductors 2014-10, Vol.35 (10), p.51-55 |
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| Format: | Artikel |
| Sprache: | eng |
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| Online-Zugang: | Volltext |
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