Band gap and conductivity variations of ZnO thin films by doping with Aluminium
Zinc Oxide thin films were prepared by Successive Ionic layer adsorption and reaction technique(SILAR). Aluminium was doped for different doping concentrations from 3 at.% to 12 at.% in steps of 3 at.%. Conductivity of the samples were taken at different temperatures. UV Spectrograph of the samples...
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| Veröffentlicht in: | IOP conference series. Materials Science and Engineering 2015-01, Vol.73 (1), p.12106 |
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| container_title | IOP conference series. Materials Science and Engineering |
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| creator | Vattappalam, Sunil C Thomas, Deepu Raju, T Mathew Augustine, Simon Mathew, Sunny |
| description | Zinc Oxide thin films were prepared by Successive Ionic layer adsorption and reaction technique(SILAR). Aluminium was doped for different doping concentrations from 3 at.% to 12 at.% in steps of 3 at.%. Conductivity of the samples were taken at different temperatures. UV Spectrograph of the samples were taken and the band gap of each sample was found from the data. It was observed that as the doping concentration of Aluminium increases, the band gap of the samples decreases and concequently conductivity of the samples increases. |
| doi_str_mv | 10.1088/1757-899X/73/1/012106 |
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UV Spectrograph of the samples were taken and the band gap of each sample was found from the data. It was observed that as the doping concentration of Aluminium increases, the band gap of the samples decreases and concequently conductivity of the samples increases.</abstract><cop>Bristol</cop><pub>IOP Publishing</pub><doi>10.1088/1757-899X/73/1/012106</doi><oa>free_for_read</oa></addata></record> |
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| subjects | Aluminium Aluminum Band spectra Doping Energy gap Materials science Spectrographs Thin films Zinc oxide Zinc oxides |
| title | Band gap and conductivity variations of ZnO thin films by doping with Aluminium |
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