High-field response of gated graphene at terahertz freguencies

We study the Fermi energy level dependence of the nonlinear terahertz (THz) transmission of gated multilayer and single-layer graphene transferred onto sapphire and quartz substrates. The two samples represent two limits of low-field impurity scattering: short-range neutral and long-range charged im...

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Veröffentlicht in:	Physical review. B 2015-12, Vol.92 (24)
Hauptverfasser:	Razavipour, Hadi, Yang, Wayne, Guermoune, Abdeladim, Hilke, Michael, Cooke, David G, Al-Naib, Ibraheem, Dignam, Marc M, Blanchard, Francois, Hafez, Hassan A, Chai, Xin, Ferachou, Denis, Ozaki, Tsuneyuki, Levesque, Pierre L, Martel, Richard
Format:	Artikel
Sprache:	eng
Schlagworte:	Amplitudes Charging Fermi surfaces Graphene Impurities Intraband absorption Nonlinearity Scattering
Online-Zugang:	Volltext
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