Fabrication of CVD graphene-based devices via laser ablation for wafer-scale characterization

Selective laser ablation of a wafer-scale graphene film is shown to provide flexible, high speed (1 wafer hour) device fabrication while avoiding the degradation of electrical properties associated with traditional lithographic methods. Picosecond laser pulses with single pulse peak fluences of 140...

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Veröffentlicht in:	2d materials 2015-10, Vol.2 (4), p.45003
Hauptverfasser:	Mackenzie, David M A, Buron, Jonas D, Whelan, Patrick R, Jessen, Bjarke S, Silajd i, Adnan, Pesquera, Amaia, Centeno, Alba, Zurutuza, Amaia, Bøggild, Peter, Petersen, Dirch H
Format:	Artikel
Sprache:	eng
Schlagworte:	Ablation CVD graphene Devices Doping Graphene Laser ablation laser cutting Optical microscopy picosecond laser pulsed laser Silicon dioxide Silicon substrates wafer-scale graphene
Online-Zugang:	Volltext
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