W-band GaN MMIC PA with 257 mW output power at 86.5 GHz

A three-stage W-band GaN monolithic microwave integrated circuit power amplifier (MMIC PA) is reported. In order to manage coupling effects between all the parts of the W-band MMIC, all matching and bias networks have been first optimized using circuit simulating software and then systematically sim...

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Veröffentlicht in:Journal of semiconductors 2015-08, Vol.36 (8), p.171-173
1. Verfasser: 徐鹏 宋旭波 吕元杰 王元刚 敦少博 尹甲运 房玉龙 顾国栋 冯志红 蔡树军
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Sprache:eng
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Zusammenfassung:A three-stage W-band GaN monolithic microwave integrated circuit power amplifier (MMIC PA) is reported. In order to manage coupling effects between all the parts of the W-band MMIC, all matching and bias networks have been first optimized using circuit simulating software and then systematically simulated on 3D full-wave electromagnetic simulator. The fabricated MMIC PA achieves a 257 mW output power at 86.5 GHz in continuous-wave mode, with an associated power added efficiency of 5.4% and an associated power gain of 6.1 dB. The power density is 459 mW/mm. Moreover, the MMIC PA offers over 100 mW in the 83-90 GHz bandwidth. Those performances were measured at drain bias of 12 V.
ISSN:1674-4926
DOI:10.1088/1674-4926/36/8/085009