Characterization of Baddeleyite-structure NbON Films Deposited by RF Reactive Sputtering for Solar Hydrogen Production Devices
In this study, baddeleyite-structure NbON was investigated as new photocatalysts for solar hydrogen production devices. We deposited pure 90-nm-thick NbON films on quartz substrates under a fixed O2 and N2 ambient mixture by RF reactive sputtering. The NbON films showed semiconductive characteristic...
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Veröffentlicht in: | Denki kagaku oyobi kōgyō butsuri kagaku 2015/09/05, Vol.83(9), pp.711-714 |
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container_title | Denki kagaku oyobi kōgyō butsuri kagaku |
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creator | KIKUCHI, Ryosuke KOUZAKI, Takashi KURABUCHi, Takahiro HATO, Kazuhito |
description | In this study, baddeleyite-structure NbON was investigated as new photocatalysts for solar hydrogen production devices. We deposited pure 90-nm-thick NbON films on quartz substrates under a fixed O2 and N2 ambient mixture by RF reactive sputtering. The NbON films showed semiconductive characteristics and a narrower band gap than that of TaON. The band gap of NbON was estimated to be 2.1 eV. We confirmed that the NbON film was very dense without distinct cracks and had an approximately stoichiometric and uniform composition. We prepared an NbON photoelectrode on a conducting substrate and clearly observed the photocurrent by 436-nm monochromatic light. NbON has potential as a photocatalyst for direct water splitting. |
doi_str_mv | 10.5796/electrochemistry.83.711 |
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We deposited pure 90-nm-thick NbON films on quartz substrates under a fixed O2 and N2 ambient mixture by RF reactive sputtering. The NbON films showed semiconductive characteristics and a narrower band gap than that of TaON. The band gap of NbON was estimated to be 2.1 eV. We confirmed that the NbON film was very dense without distinct cracks and had an approximately stoichiometric and uniform composition. We prepared an NbON photoelectrode on a conducting substrate and clearly observed the photocurrent by 436-nm monochromatic light. 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We deposited pure 90-nm-thick NbON films on quartz substrates under a fixed O2 and N2 ambient mixture by RF reactive sputtering. The NbON films showed semiconductive characteristics and a narrower band gap than that of TaON. The band gap of NbON was estimated to be 2.1 eV. We confirmed that the NbON film was very dense without distinct cracks and had an approximately stoichiometric and uniform composition. We prepared an NbON photoelectrode on a conducting substrate and clearly observed the photocurrent by 436-nm monochromatic light. NbON has potential as a photocatalyst for direct water splitting.</description><subject>Deposition</subject><subject>Devices</subject><subject>Hydrogen production</subject><subject>NbON</subject><subject>Photocatalysis</subject><subject>Photocatalyst</subject><subject>Photocatalysts</subject><subject>Photocurrent</subject><subject>Sputtering</subject><subject>Water Splitting</subject><issn>1344-3542</issn><issn>2186-2451</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNptkU9r2zAYh03ZoKHrZ6hgl12c6a8lHbe0WQelLe16FrL8OlVwrEySC-5hn30KGT2UXSSQnt_zCv2q6oLgpZC6-QoDuByDe4adTznOS8WWkpCTakGJamrKBflQLQjjvGaC09PqPKUtxphg3WiqF9Wf1bON1mWI_tVmH0YUevTddl0xzz5DXayTy1MEdNve3aK1H3YJXcI-pHLboXZGD2v0AEXhXwA97qd8cI0b1IeIHsNgI7qeuxg2MKL7GLoiO0y5hBfvIH2qPvZ2SHD-bz-rntZXv1bX9c3dj5-rbze1ExrnWrnWCtZr1UtJOy6sbjGxHPe8EZK05dyBdg4LxqXDzoq-a1tMdacspz0DdlZ9OXr3MfyeIGVT_svBMNgRwpQMURhzwSSXBf38Dt2GKY7ldYZI0VCqKFOFkkfKxZBShN7so9_ZOBuCzaEa874ao5gp1ZTk_TG5Tdlu4C1nY_ZugP_m9GEh3FyV5gR5Q13pzsDI_gKsFacb</recordid><startdate>2015</startdate><enddate>2015</enddate><creator>KIKUCHI, Ryosuke</creator><creator>KOUZAKI, Takashi</creator><creator>KURABUCHi, Takahiro</creator><creator>HATO, Kazuhito</creator><general>The Electrochemical Society of Japan</general><general>Japan Science and Technology Agency</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7QF</scope><scope>7QL</scope><scope>7QO</scope><scope>7QQ</scope><scope>7SC</scope><scope>7SE</scope><scope>7SP</scope><scope>7SR</scope><scope>7TA</scope><scope>7TB</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>C1K</scope><scope>F28</scope><scope>FR3</scope><scope>H8D</scope><scope>H8G</scope><scope>JG9</scope><scope>JQ2</scope><scope>KR7</scope><scope>L7M</scope><scope>L~C</scope><scope>L~D</scope><scope>P64</scope></search><sort><creationdate>2015</creationdate><title>Characterization of Baddeleyite-structure NbON Films Deposited by RF Reactive Sputtering for Solar Hydrogen Production Devices</title><author>KIKUCHI, Ryosuke ; KOUZAKI, Takashi ; KURABUCHi, Takahiro ; HATO, Kazuhito</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c590t-8cba53f98f772d45a9b01a40f46571b98fce9cc05347c0ca5fdbb029d8a42f3e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Deposition</topic><topic>Devices</topic><topic>Hydrogen production</topic><topic>NbON</topic><topic>Photocatalysis</topic><topic>Photocatalyst</topic><topic>Photocatalysts</topic><topic>Photocurrent</topic><topic>Sputtering</topic><topic>Water Splitting</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>KIKUCHI, Ryosuke</creatorcontrib><creatorcontrib>KOUZAKI, Takashi</creatorcontrib><creatorcontrib>KURABUCHi, Takahiro</creatorcontrib><creatorcontrib>HATO, Kazuhito</creatorcontrib><collection>CrossRef</collection><collection>Aluminium Industry Abstracts</collection><collection>Bacteriology Abstracts (Microbiology B)</collection><collection>Biotechnology Research Abstracts</collection><collection>Ceramic Abstracts</collection><collection>Computer and Information Systems Abstracts</collection><collection>Corrosion Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Materials Business File</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Environmental Sciences and Pollution Management</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Aerospace Database</collection><collection>Copper Technical Reference Library</collection><collection>Materials Research Database</collection><collection>ProQuest Computer Science Collection</collection><collection>Civil Engineering Abstracts</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Computer and Information Systems Abstracts Academic</collection><collection>Computer and Information Systems Abstracts Professional</collection><collection>Biotechnology and BioEngineering Abstracts</collection><jtitle>Denki kagaku oyobi kōgyō butsuri kagaku</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>KIKUCHI, Ryosuke</au><au>KOUZAKI, Takashi</au><au>KURABUCHi, Takahiro</au><au>HATO, Kazuhito</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Characterization of Baddeleyite-structure NbON Films Deposited by RF Reactive Sputtering for Solar Hydrogen Production Devices</atitle><jtitle>Denki kagaku oyobi kōgyō butsuri kagaku</jtitle><addtitle>Electrochemistry</addtitle><date>2015</date><risdate>2015</risdate><volume>83</volume><issue>9</issue><spage>711</spage><epage>714</epage><pages>711-714</pages><issn>1344-3542</issn><eissn>2186-2451</eissn><abstract>In this study, baddeleyite-structure NbON was investigated as new photocatalysts for solar hydrogen production devices. We deposited pure 90-nm-thick NbON films on quartz substrates under a fixed O2 and N2 ambient mixture by RF reactive sputtering. The NbON films showed semiconductive characteristics and a narrower band gap than that of TaON. The band gap of NbON was estimated to be 2.1 eV. We confirmed that the NbON film was very dense without distinct cracks and had an approximately stoichiometric and uniform composition. We prepared an NbON photoelectrode on a conducting substrate and clearly observed the photocurrent by 436-nm monochromatic light. NbON has potential as a photocatalyst for direct water splitting.</abstract><cop>Tokyo</cop><pub>The Electrochemical Society of Japan</pub><doi>10.5796/electrochemistry.83.711</doi><tpages>4</tpages><oa>free_for_read</oa></addata></record> |
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subjects | Deposition Devices Hydrogen production NbON Photocatalysis Photocatalyst Photocatalysts Photocurrent Sputtering Water Splitting |
title | Characterization of Baddeleyite-structure NbON Films Deposited by RF Reactive Sputtering for Solar Hydrogen Production Devices |
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