Controlling the stress of growing GaN on 150-mm Si (111) in an AlN/GaN strained layer superlattice

The strain state in the AlN/GaN SLS was caused by the diffusion of Al from AlN into GaN in the SLS. The unintended AlGaN played a critical role in reducing the mismatch between the AlN and GaN layers, and efficiently accumulated stress without causing relaxation in the AlN/GaN SLS. •The interface of...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Applied surface science 2016-01, Vol.362, p.434-440
Hauptverfasser:	Lin, Po-Jung, Huang, Shih-Yung, Wang, Wei-Kai, Chen, Che-Lin, Chung, Bu-Chin, Wuu, Dong-Sing
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum nitride Bowing Compressive properties Gallium nitrides Metalorganic chemical vapor deposition Nitrides Semiconducting III-V materials Silicon substrates Stresses Superlattice Tensile stress Wafers
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!