Phonon contribution to nonionizing energy loss in silicon detectors

Nonionizing energy loss（NIEL） has been applied to a number of studies concerning displacement damage effects in materials and devices. However, most studies consider only the contribution of displacement damage effects,neglecting the contribution from phonons. In this paper, a NIEL model, which cons...

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Veröffentlicht in:	Chinese physics C 2015-06, Vol.39 (6), p.81-84
1. Verfasser:	李荣华李占奎杨磊李冬梅李海霞王柱生陈翠红谭继廉刘凤琼戎欣娟王秀华李春艳祖凯铃卢子伟
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Sprache:	eng
Schlagworte:	Damage Detectors Displacement Equivalence Fluence Irradiation NIEL Phonons Silicon SRIM 声子损伤效应电离能量损失硅探测器能量密度蒙特卡洛
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creator	李荣华李占奎杨磊李冬梅李海霞王柱生陈翠红谭继廉刘凤琼戎欣娟王秀华李春艳祖凯铃卢子伟
description	Nonionizing energy loss（NIEL） has been applied to a number of studies concerning displacement damage effects in materials and devices. However, most studies consider only the contribution of displacement damage effects,neglecting the contribution from phonons. In this paper, a NIEL model, which considers the contribution of phonons,has been established using the Monte Carlo code SRIM. The maximum endurable fluence for silicon detectors has been estimated using the equivalent irradiation fluence compared with experimental data for the incident particles.NIEL is proportional to the equivalent irradiation fluence that the detector has received.
doi_str_mv	10.1088/1674-1137/39/6/066004
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subjects	Damage Detectors Displacement Equivalence Fluence Irradiation NIEL Phonons Silicon SRIM 声子损伤效应电离能量损失硅探测器能量密度蒙特卡洛
title	Phonon contribution to nonionizing energy loss in silicon detectors
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