Field evaporation of insulators and semiconductors: Theoretical insights for ZnO
We look at the new challenges associated with Atom Probe Tomography of insulators and semiconductors with regard to local fields inside and on the surface of such materials. The theoretical discovery that in high fields the band gap in these materials is drastically reduced to the point where at the...
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Veröffentlicht in: | Ultramicroscopy 2015-12, Vol.159, p.156-161 |
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Hauptverfasser: | , |
Format: | Artikel |
Sprache: | eng |
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Online-Zugang: | Volltext |
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