Reduction of Critical Dimension Difference in Litho-Etch-Litho- Etch Double Patterning Process

The successful implementation of double patterning lithography in semiconductor manufacturing is dependent on the progress of several key items, including good control of critical dimension (CD) uniformity and overlay. Here we report a pass-to-pass post-etch CD (ECD) difference in Litho-Etch-Litho-...

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Veröffentlicht in:	Journal of Photopolymer Science and Technology 2015/06/23, Vol.28(1), pp.13-16
Hauptverfasser:	Tang, Hao, Shearer, Jeffrey C., Cheong, Lin Lee, Saulnier, Nicole A., Sieg, Stuart A., Petrillo, Karen, Metz, Andrew, Arnold, John C.
Format:	Artikel
Sprache:	eng
Schlagworte:	Critical Dimension Deltas Double Patterning Etching Litho-Etch-Litho- Etch Lithography Organic Planarization Layer Patterning Photopolymers Planarization Semiconductors Variability
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